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Bismuth vanadate-based medium-low-entropy oxygen ion conductor material and preparation method thereof
The invention discloses a bismuth vanadate-based medium-low-entropy oxygen ion conductor material and a preparation method thereof. The preparation method comprises the following steps: (1) drying raw materials Bi2O3 and CuO in a drying oven at 180 DEG C for 12 hours, and weighing according to a designed stoichiometric ratio; the preparation method comprises the following steps: putting weighed raw materials of Bi2O3, V2O5, CuO, NiO, Nb2O5, TiO2, Ga2O3, MoO3, SiO2, Ta2O5 and ZrO2 with the purity of more than 99% (mass percent) into a mortar, mixing by using alcohol as a dispersing agent, fully grinding for more than 1 hour, uniformly mixing, and drying under an infrared lamp to obtain sample powder; (2) weighing 0.5 g of the powder sample, putting the powder sample into a tabletting grinding tool, and pressing the powder sample under the pressure of 4 Mpa for 30 seconds to obtain a sheet, so as to obtain a round sheet with the diameter of 10 mm and the thickness of about 1-2 mm; the preparation method comprises the following steps: grinding the raw materials, putting the raw materials into a crucible, presintering for 12 hours at 600 DEG C, further grinding and tabletting a sample, and finally sintering and preserving heat for 12 hours at 890 DEG C to obtain a target product. The bismuth vanadate-based medium-low-entropy oxygen ion conductor material prepared by the method is low in cost and excellent in electrical property, and the highest conductivity can reach 10 <-2 > S/cm.
本发明公开了一类钒酸铋基中低熵氧离子导体材料及其制备方法。（1）将原料Bi2O3与CuO放置在干燥箱中180℃干燥12小时，按设计的化学计量比进行称量。将称量好的纯度为99%（质量百分比）以上的Bi2O3、V2O5、CuO、NiO、Nb2O5、TiO2、Ga2O3、MoO3、SiO2、Ta2O5、ZrO2原料放在研钵中，用酒精作为分散剂混合，充分研磨1小时以上，混合均匀后在红外灯下干燥得到样品粉末；（2）将粉末样品称量0.5g放入压片磨具内，在4Mpa压力压制30秒成片，压出直径为10mm，厚度大约为1‑2mm的圆片。放入坩埚中，在600℃下预烧12小时，再将样品继续研磨、压片，最后在890℃烧结保温12小时，获得目标产物。本发明制备的钒酸铋基中低熵氧离子导体材料成本低廉，电学性能优异，电导率最高可达到10‑2 S/cm。
Bismuth vanadate-based medium-low-entropy oxygen ion conductor material and preparation method thereof
The invention discloses a bismuth vanadate-based medium-low-entropy oxygen ion conductor material and a preparation method thereof. The preparation method comprises the following steps: (1) drying raw materials Bi2O3 and CuO in a drying oven at 180 DEG C for 12 hours, and weighing according to a designed stoichiometric ratio; the preparation method comprises the following steps: putting weighed raw materials of Bi2O3, V2O5, CuO, NiO, Nb2O5, TiO2, Ga2O3, MoO3, SiO2, Ta2O5 and ZrO2 with the purity of more than 99% (mass percent) into a mortar, mixing by using alcohol as a dispersing agent, fully grinding for more than 1 hour, uniformly mixing, and drying under an infrared lamp to obtain sample powder; (2) weighing 0.5 g of the powder sample, putting the powder sample into a tabletting grinding tool, and pressing the powder sample under the pressure of 4 Mpa for 30 seconds to obtain a sheet, so as to obtain a round sheet with the diameter of 10 mm and the thickness of about 1-2 mm; the preparation method comprises the following steps: grinding the raw materials, putting the raw materials into a crucible, presintering for 12 hours at 600 DEG C, further grinding and tabletting a sample, and finally sintering and preserving heat for 12 hours at 890 DEG C to obtain a target product. The bismuth vanadate-based medium-low-entropy oxygen ion conductor material prepared by the method is low in cost and excellent in electrical property, and the highest conductivity can reach 10 <-2 > S/cm.
本发明公开了一类钒酸铋基中低熵氧离子导体材料及其制备方法。（1）将原料Bi2O3与CuO放置在干燥箱中180℃干燥12小时，按设计的化学计量比进行称量。将称量好的纯度为99%（质量百分比）以上的Bi2O3、V2O5、CuO、NiO、Nb2O5、TiO2、Ga2O3、MoO3、SiO2、Ta2O5、ZrO2原料放在研钵中，用酒精作为分散剂混合，充分研磨1小时以上，混合均匀后在红外灯下干燥得到样品粉末；（2）将粉末样品称量0.5g放入压片磨具内，在4Mpa压力压制30秒成片，压出直径为10mm，厚度大约为1‑2mm的圆片。放入坩埚中，在600℃下预烧12小时，再将样品继续研磨、压片，最后在890℃烧结保温12小时，获得目标产物。本发明制备的钒酸铋基中低熵氧离子导体材料成本低廉，电学性能优异，电导率最高可达到10‑2 S/cm。
Bismuth vanadate-based medium-low-entropy oxygen ion conductor material and preparation method thereof
一类钒酸铋基中低熵氧离子导体材料及其制备方法
XU JUNGU (author) / SONG XINGPING (author)
2023-11-14
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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