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The invention discloses a Sb-doped magnesium silicide thermoelectric semiconductor material and a preparation method and application thereof.Photovoltaic industry waste silicon powder, magnesium powder and antimony powder serve as raw materials, a vacuum melting method and a discharge plasma sintering process are optimized, the content of the antimony powder is controlled, and in a Mg2.1 Si1-xSbx sample, when x is equal to 0.01, the Sb-doped magnesium silicide thermoelectric semiconductor material is obtained; and the prepared Sb-doped magnesium silicide thermoelectric semiconductor material has the highest thermoelectric performance. Compared with a Sb-doped magnesium silicide thermoelectric material prepared by adopting commercial silicon powder, the Sb-doped magnesium silicide thermoelectric material has the advantages that the unpurified photovoltaic industry waste silicon powder is adopted, the manufacturing cost is directly reduced, similar thermoelectric performance can be achieved, compared with an undoped magnesium silicide thermoelectric semiconductor material, the thermoelectric performance of the Sb-doped magnesium silicide thermoelectric material is greatly improved, and the Sb-doped magnesium silicide thermoelectric material has certain significance in environmental protection.
本发明公开了一种Sb掺杂硅化镁热电半导体材料及其制备方法和应用,以光伏产业废硅粉、镁粉和锑粉为原料,通过真空熔炼法和放电等离子体烧结的工艺优化,同时控制锑粉含量,在Mg2.1Si1‑xSbx样品中,当x=0.01时,制得的Sb掺杂硅化镁热电半导体材料热电性能最高。与采用商业硅粉制备的Sb掺杂硅化镁热电材料相比,本发明采用未经提纯的光伏产业废硅粉,直接降低了制造成本,可以达到相近热电性能,相较于未掺杂的硅化镁热电半导体材料,其热电性能有了极大的提高,并且对环境保护具有一定意义。
The invention discloses a Sb-doped magnesium silicide thermoelectric semiconductor material and a preparation method and application thereof.Photovoltaic industry waste silicon powder, magnesium powder and antimony powder serve as raw materials, a vacuum melting method and a discharge plasma sintering process are optimized, the content of the antimony powder is controlled, and in a Mg2.1 Si1-xSbx sample, when x is equal to 0.01, the Sb-doped magnesium silicide thermoelectric semiconductor material is obtained; and the prepared Sb-doped magnesium silicide thermoelectric semiconductor material has the highest thermoelectric performance. Compared with a Sb-doped magnesium silicide thermoelectric material prepared by adopting commercial silicon powder, the Sb-doped magnesium silicide thermoelectric material has the advantages that the unpurified photovoltaic industry waste silicon powder is adopted, the manufacturing cost is directly reduced, similar thermoelectric performance can be achieved, compared with an undoped magnesium silicide thermoelectric semiconductor material, the thermoelectric performance of the Sb-doped magnesium silicide thermoelectric material is greatly improved, and the Sb-doped magnesium silicide thermoelectric material has certain significance in environmental protection.
本发明公开了一种Sb掺杂硅化镁热电半导体材料及其制备方法和应用,以光伏产业废硅粉、镁粉和锑粉为原料,通过真空熔炼法和放电等离子体烧结的工艺优化,同时控制锑粉含量,在Mg2.1Si1‑xSbx样品中,当x=0.01时,制得的Sb掺杂硅化镁热电半导体材料热电性能最高。与采用商业硅粉制备的Sb掺杂硅化镁热电材料相比,本发明采用未经提纯的光伏产业废硅粉,直接降低了制造成本,可以达到相近热电性能,相较于未掺杂的硅化镁热电半导体材料,其热电性能有了极大的提高,并且对环境保护具有一定意义。
Sb-doped magnesium silicide thermoelectric semiconductor material and preparation method and application thereof
一种Sb掺杂硅化镁热电半导体材料及其制备方法和应用
2023-11-17
Patent
Electronic Resource
Chinese
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