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Cadmium sulfide target material and preparation method thereof
The invention belongs to the technical field of sputtering target materials, and discloses a cadmium sulfide target material and a preparation method thereof.The cadmium sulfide target material contains cadmium sulfate, and the mass content of the cadmium sulfate is larger than 0.1 and smaller than or equal to 0.5; the cadmium sulfide target material is obtained by mixing cadmium sulfide powder and cadmium sulfate powder, filling the mixture into a mold, vacuumizing, heating, preserving heat and cooling in sequence, wherein in the heat preservation process, pressurization and pressure maintaining are carried out after heat preservation is carried out for 20-50 min; wherein the cadmium sulfide powder and the cadmium sulfate powder are mixed by adopting a ball milling process, and the specific steps are as follows: the cadmium sulfide powder and the cadmium sulfate powder are put into a ball milling barrel for dry milling and mixing, the ball-to-material ratio is 1: (1.2-1.5), and the ball milling time is 3-6 hours. According to the preparation method of the cadmium sulfide target material provided by the invention, cadmium sulfate and cadmium sulfide are mixed through a ball milling process, so that the distribution uniformity of the cadmium sulfate in the cadmium sulfide target material is improved, and the sputtering efficiency of the target material and the uniformity of a sputtering film are further improved.
本发明属于溅射靶材技术领域，公开了一种硫化镉靶材及其制备方法，该硫化镉靶材内含有硫酸镉，所述硫酸镉的质量含量＞0.1且≤0.5；将硫化镉粉末和硫酸镉粉末依次经过混合、装入模具、抽真空、加热、保温、降温得到所述硫化镉靶材；其中在保温的过程中在保温20～50min后进行加压、保压；其中混合采用球磨工艺将硫化镉粉末和硫酸镉粉末混合，具体步骤为：将硫化镉粉末和硫酸镉粉末放入球磨桶内进行干磨混合，球料比为1:1.2～1.5，球磨时间为3～6h。本发明提供了一种硫化镉靶材的制备方法，通过球磨工艺对硫酸镉和硫化镉进行混合，提高硫酸镉在硫化镉靶材中的分布均匀性，从而进一步提高靶材的溅射效率和溅射薄膜的均匀性。
Cadmium sulfide target material and preparation method thereof
The invention belongs to the technical field of sputtering target materials, and discloses a cadmium sulfide target material and a preparation method thereof.The cadmium sulfide target material contains cadmium sulfate, and the mass content of the cadmium sulfate is larger than 0.1 and smaller than or equal to 0.5; the cadmium sulfide target material is obtained by mixing cadmium sulfide powder and cadmium sulfate powder, filling the mixture into a mold, vacuumizing, heating, preserving heat and cooling in sequence, wherein in the heat preservation process, pressurization and pressure maintaining are carried out after heat preservation is carried out for 20-50 min; wherein the cadmium sulfide powder and the cadmium sulfate powder are mixed by adopting a ball milling process, and the specific steps are as follows: the cadmium sulfide powder and the cadmium sulfate powder are put into a ball milling barrel for dry milling and mixing, the ball-to-material ratio is 1: (1.2-1.5), and the ball milling time is 3-6 hours. According to the preparation method of the cadmium sulfide target material provided by the invention, cadmium sulfate and cadmium sulfide are mixed through a ball milling process, so that the distribution uniformity of the cadmium sulfate in the cadmium sulfide target material is improved, and the sputtering efficiency of the target material and the uniformity of a sputtering film are further improved.
本发明属于溅射靶材技术领域，公开了一种硫化镉靶材及其制备方法，该硫化镉靶材内含有硫酸镉，所述硫酸镉的质量含量＞0.1且≤0.5；将硫化镉粉末和硫酸镉粉末依次经过混合、装入模具、抽真空、加热、保温、降温得到所述硫化镉靶材；其中在保温的过程中在保温20～50min后进行加压、保压；其中混合采用球磨工艺将硫化镉粉末和硫酸镉粉末混合，具体步骤为：将硫化镉粉末和硫酸镉粉末放入球磨桶内进行干磨混合，球料比为1:1.2～1.5，球磨时间为3～6h。本发明提供了一种硫化镉靶材的制备方法，通过球磨工艺对硫酸镉和硫化镉进行混合，提高硫酸镉在硫化镉靶材中的分布均匀性，从而进一步提高靶材的溅射效率和溅射薄膜的均匀性。
Cadmium sulfide target material and preparation method thereof
一种硫化镉靶材及其制备方法
WEN CHONGBIN (author) / ZHU LIU (author) / TONG PEIYUN (author)
2023-12-08
Patent
Electronic Resource
Chinese
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