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Method for preventing surface deposition flash crystal of normal-pressure solid-phase sintered silicon carbide ceramic
The invention discloses a method for preventing surface deposition and flash crystal of normal-pressure solid-phase sintered silicon carbide ceramic. Comprising at least one of a pre-sintering step, a sintering step or a post-sintering step; the step before sintering comprises the step of covering graphite paper on the surface of a sintered sample, or spraying a boron carbide ceramic coating or a boron nitride ceramic coating on the surface of the sintered sample; in the sintering step, the highest sintering temperature is reduced to 2050-2100 DEG C from 2200 DEG C, and meanwhile, the heat preservation time is prolonged by 0.5-1 hour, or the gas flow of protective gas is increased by 5-15 m < 3 >/h; in the step of sintering, a silicon carbide ceramic product is placed in a container filled with molten NaOH for high-temperature corrosion, so that the surface roughness of the sealing material is effectively reduced, near-net-size forming of the silicon carbide ceramic sealing element is realized, and the method has great practical significance for reducing the production cost.
一种防止常压固相烧结碳化硅陶瓷表面沉积闪晶的方法；包括烧结前步骤、烧结时步骤或烧结后步骤中的至少一种；所述烧结前步骤包括在烧结样品表面覆盖石墨纸，或者在烧结样品的表面喷涂碳化硼陶瓷涂层或氮化硼陶瓷涂层；所述烧结时步骤包括将最高烧结温度由2200℃降低至2050‑2100℃，同时延长保温时间0.5‑1小时，或者增大保护气体的气流量5‑15m3/h；所述烧结后步骤包括将碳化硅陶瓷产品置入装有熔融NaOH的容器中进行高温腐蚀，有效降低密封材料表面粗糙度，实现碳化硅陶瓷密封件近净尺寸成型，对于降低生产成本具有重的实际意义。
Method for preventing surface deposition flash crystal of normal-pressure solid-phase sintered silicon carbide ceramic
The invention discloses a method for preventing surface deposition and flash crystal of normal-pressure solid-phase sintered silicon carbide ceramic. Comprising at least one of a pre-sintering step, a sintering step or a post-sintering step; the step before sintering comprises the step of covering graphite paper on the surface of a sintered sample, or spraying a boron carbide ceramic coating or a boron nitride ceramic coating on the surface of the sintered sample; in the sintering step, the highest sintering temperature is reduced to 2050-2100 DEG C from 2200 DEG C, and meanwhile, the heat preservation time is prolonged by 0.5-1 hour, or the gas flow of protective gas is increased by 5-15 m < 3 >/h; in the step of sintering, a silicon carbide ceramic product is placed in a container filled with molten NaOH for high-temperature corrosion, so that the surface roughness of the sealing material is effectively reduced, near-net-size forming of the silicon carbide ceramic sealing element is realized, and the method has great practical significance for reducing the production cost.
一种防止常压固相烧结碳化硅陶瓷表面沉积闪晶的方法；包括烧结前步骤、烧结时步骤或烧结后步骤中的至少一种；所述烧结前步骤包括在烧结样品表面覆盖石墨纸，或者在烧结样品的表面喷涂碳化硼陶瓷涂层或氮化硼陶瓷涂层；所述烧结时步骤包括将最高烧结温度由2200℃降低至2050‑2100℃，同时延长保温时间0.5‑1小时，或者增大保护气体的气流量5‑15m3/h；所述烧结后步骤包括将碳化硅陶瓷产品置入装有熔融NaOH的容器中进行高温腐蚀，有效降低密封材料表面粗糙度，实现碳化硅陶瓷密封件近净尺寸成型，对于降低生产成本具有重的实际意义。
Method for preventing surface deposition flash crystal of normal-pressure solid-phase sintered silicon carbide ceramic
一种防止常压固相烧结碳化硅陶瓷表面沉积闪晶的方法
JIAN WUBING (author) / GAO JINDONG (author) / ZHENG QINGYANG (author) / XU WENXUE (author)
2023-12-22
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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