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Preparation method of silicon dioxide film with low refractive index
The invention belongs to the technical field of semiconductor materials, and particularly relates to a low-refractive-index silicon dioxide film preparation method which comprises the following steps: preparing a low-refractive-index silicon dioxide coating solution; carrying out pressure filtration on the solution by using a filter element, and uniformly coating a silicon wafer with the solution at a speed of 3000rpm/min by using a spin-coating method; the silicon wafer is placed on a baking tray to be heated for 2 minutes at the temperature of 80 DEG C, heated for 2 minutes at the temperature of 150 DEG C and heated for 10 minutes at the temperature of 300 DEG C, and a porous silicon dioxide film is formed; the low-refractive-index silicon dioxide coating solution comprises the following components in parts by weight: 16-20 parts of a siloxane compound, 8-12 parts of alkyl quaternary ammonium salt, 1-2 parts of a catalyst, 1-2 parts of a surfactant with the solid content of 1.75%, 100-120 parts of a solvent and 10-15 parts of deionized water. The silicon dioxide film with the refractive index being 1.2 or below can be prepared, the preparation device is simple, and large-area film coating and film coating of components in complex forms can be conveniently, economically and efficiently completed.
本发明属于半导体材料技术领域，具体涉及一种低折射率二氧化硅薄膜制备方法，包括：制备低折射率二氧化硅涂料溶液；使用滤芯将所述溶液加压过滤，利用旋涂法将溶液以3000rpm/min均匀地涂布到硅片上；将硅片放置到烤盘上在80℃加热2分钟，在150℃加热2分钟，在300℃加热10分钟，形成多孔隙二氧化硅薄膜；所述低折射率二氧化硅涂料溶液包括以下重量份组分：16‑20份硅氧烷化合物，8‑12份烷基季铵盐、1‑2份催化剂、1‑2份固体含量1.75％的表面活性剂、100‑120份溶剂、10‑15份去离子水。本发明可以制得折射率在1.2以下的二氧化硅薄膜，并且制备装置简单，便于经济、高效地完成大面积涂膜及复杂形态构件涂膜。
Preparation method of silicon dioxide film with low refractive index
The invention belongs to the technical field of semiconductor materials, and particularly relates to a low-refractive-index silicon dioxide film preparation method which comprises the following steps: preparing a low-refractive-index silicon dioxide coating solution; carrying out pressure filtration on the solution by using a filter element, and uniformly coating a silicon wafer with the solution at a speed of 3000rpm/min by using a spin-coating method; the silicon wafer is placed on a baking tray to be heated for 2 minutes at the temperature of 80 DEG C, heated for 2 minutes at the temperature of 150 DEG C and heated for 10 minutes at the temperature of 300 DEG C, and a porous silicon dioxide film is formed; the low-refractive-index silicon dioxide coating solution comprises the following components in parts by weight: 16-20 parts of a siloxane compound, 8-12 parts of alkyl quaternary ammonium salt, 1-2 parts of a catalyst, 1-2 parts of a surfactant with the solid content of 1.75%, 100-120 parts of a solvent and 10-15 parts of deionized water. The silicon dioxide film with the refractive index being 1.2 or below can be prepared, the preparation device is simple, and large-area film coating and film coating of components in complex forms can be conveniently, economically and efficiently completed.
本发明属于半导体材料技术领域，具体涉及一种低折射率二氧化硅薄膜制备方法，包括：制备低折射率二氧化硅涂料溶液；使用滤芯将所述溶液加压过滤，利用旋涂法将溶液以3000rpm/min均匀地涂布到硅片上；将硅片放置到烤盘上在80℃加热2分钟，在150℃加热2分钟，在300℃加热10分钟，形成多孔隙二氧化硅薄膜；所述低折射率二氧化硅涂料溶液包括以下重量份组分：16‑20份硅氧烷化合物，8‑12份烷基季铵盐、1‑2份催化剂、1‑2份固体含量1.75％的表面活性剂、100‑120份溶剂、10‑15份去离子水。本发明可以制得折射率在1.2以下的二氧化硅薄膜，并且制备装置简单，便于经济、高效地完成大面积涂膜及复杂形态构件涂膜。
Preparation method of silicon dioxide film with low refractive index
一种低折射率二氧化硅薄膜制备方法
WANG YUN (author) / CHEN WEISHU (author) / HUANG SHIQIAO (author) / YU LEI (author) / HE DANDAN (author) / LI ZHENG (author) / CHEN ZIMING (author)
2023-12-29
Patent
Electronic Resource
Chinese
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