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Preparation method of high-purity silicon carbide powder
The invention discloses a preparation method of high-purity silicon carbide powder, which comprises the following steps: (1) performing wet mixing on high-purity carbon powder and high-purity silicon powder, drying, and pressing to form a mixture blank; (2) heating the green body to 1000 DEG C in vacuum and keeping the temperature for 1 hour; then raising the temperature to 1500-1700 DEG C and keeping the temperature for 3 hours; then raising the temperature to 1900 DEG C and keeping the temperature for 2 hours; and cooling to room temperature to obtain the high-purity silicon carbide powder. According to the preparation method disclosed by the invention, a phenolic resin material ball milling tank, a grinding ball and a dry pressing mold are adopted to carry out wet-process mixing and dry pressing molding processes, sintering is carried out at 1900 DEG C, generated beta-SiC can be promoted to be converted into alpha-SiC, the residual carbon amount is reduced, and residual silicon is volatilized in a silicon steam form to improve the purity of silicon carbide generated by reaction. The purity of the silicon carbide powder prepared through the method is 99.999% or above, the silicon carbide single crystal growth requirement is completely met, and large-scale production can be achieved.
本发明公开了一种高纯碳化硅粉体的制备方法，包括以下步骤：(1)将高纯碳粉和高纯硅粉进行湿法混料，干燥后进行压制，形成混合料坯体；(2)将坯体在真空下升温至1000℃并保温1小时；然后升温至1500～1700℃并保温3小时；然后升温至1900℃并保温2小时；降温至室温即得高纯碳化硅粉体。本发明的制备方法采用酚醛树脂材质球磨罐、研磨球和干压模具进行湿法混料和干压成型工艺，采用1900℃烧结，可促使生成的β‑SiC转变为α‑SiC，降低残碳量，残余硅将以硅蒸汽形式挥发以提高反应生成碳化硅纯度。利用本发明的方法制得的碳化硅粉体，纯度99.999％以上，完全满足碳化硅单晶生长需要，可实现大规模生产。
Preparation method of high-purity silicon carbide powder
The invention discloses a preparation method of high-purity silicon carbide powder, which comprises the following steps: (1) performing wet mixing on high-purity carbon powder and high-purity silicon powder, drying, and pressing to form a mixture blank; (2) heating the green body to 1000 DEG C in vacuum and keeping the temperature for 1 hour; then raising the temperature to 1500-1700 DEG C and keeping the temperature for 3 hours; then raising the temperature to 1900 DEG C and keeping the temperature for 2 hours; and cooling to room temperature to obtain the high-purity silicon carbide powder. According to the preparation method disclosed by the invention, a phenolic resin material ball milling tank, a grinding ball and a dry pressing mold are adopted to carry out wet-process mixing and dry pressing molding processes, sintering is carried out at 1900 DEG C, generated beta-SiC can be promoted to be converted into alpha-SiC, the residual carbon amount is reduced, and residual silicon is volatilized in a silicon steam form to improve the purity of silicon carbide generated by reaction. The purity of the silicon carbide powder prepared through the method is 99.999% or above, the silicon carbide single crystal growth requirement is completely met, and large-scale production can be achieved.
本发明公开了一种高纯碳化硅粉体的制备方法，包括以下步骤：(1)将高纯碳粉和高纯硅粉进行湿法混料，干燥后进行压制，形成混合料坯体；(2)将坯体在真空下升温至1000℃并保温1小时；然后升温至1500～1700℃并保温3小时；然后升温至1900℃并保温2小时；降温至室温即得高纯碳化硅粉体。本发明的制备方法采用酚醛树脂材质球磨罐、研磨球和干压模具进行湿法混料和干压成型工艺，采用1900℃烧结，可促使生成的β‑SiC转变为α‑SiC，降低残碳量，残余硅将以硅蒸汽形式挥发以提高反应生成碳化硅纯度。利用本发明的方法制得的碳化硅粉体，纯度99.999％以上，完全满足碳化硅单晶生长需要，可实现大规模生产。
Preparation method of high-purity silicon carbide powder
一种高纯碳化硅粉体的制备方法
LIANG LIDONG (author) / BAI JIANGUANG (author) / HUANG RUI (author) / OU YI (author) / LIU LEI (author) / SONG HAILONG (author) / HAN MAOWU (author) / XIAO LIYAN (author) / YANG JIE (author) / ZHANG GENG (author)
2024-01-16
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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