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A platform for research: civil engineering, architecture and urbanism
Beryllium oxide base
A substrate having a top and a bottom and comprising a beryllium oxide composition containing at least 95 wt% beryllium oxide and optionally fluorine/fluorine ions. The substrate exhibits a clamping pressure of at least 133 kPa at a temperature of at least 600 DEG C and a bulk resistivity of greater than 1 x 105 ohm-m at a temperature of 800 DEG C.
具有顶部和底部且包含氧化铍组合物的基板，该氧化铍组合物含有至少95wt％的氧化铍和可选的氟/氟离子。该基板在至少600℃的温度表现出至少133kPa的夹持压力，在800℃的温度表现出大于1x 105ohm‑m的体电阻率。
Beryllium oxide base
A substrate having a top and a bottom and comprising a beryllium oxide composition containing at least 95 wt% beryllium oxide and optionally fluorine/fluorine ions. The substrate exhibits a clamping pressure of at least 133 kPa at a temperature of at least 600 DEG C and a bulk resistivity of greater than 1 x 105 ohm-m at a temperature of 800 DEG C.
具有顶部和底部且包含氧化铍组合物的基板，该氧化铍组合物含有至少95wt％的氧化铍和可选的氟/氟离子。该基板在至少600℃的温度表现出至少133kPa的夹持压力，在800℃的温度表现出大于1x 105ohm‑m的体电阻率。
Beryllium oxide base
氧化铍基座
SMITH LARRY T (author) / GRESSING FRITZ C (author) / AZAT ZAN (author) / KUSNER ROBERT E (author) / CAMPBELL JEFFREY R (author) / SAYER AARON B (author) / ZHANG JING H (author) / LU GORDON V (author)
2024-02-02
Patent
Electronic Resource
Chinese
Defect Properties of Beryllium Oxide
| British Library Online Contents | 1997
Experimental Beryllium Oxide Reactor Program
NTIS | 1963