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Hafnium tantalate single crystal epitaxial film with modulation structure and preparation method of hafnium tantalate single crystal epitaxial film
The invention relates to a hafnium tantalate single-crystal epitaxial film with a modulation structure and a preparation method thereof. The preparation method comprises the following steps: preparing a hafnium tantalate ceramic target material and carrying out acid treatment on the surface of a zirconium oxide single-crystal substrate; heating the zirconium oxide single crystal substrate to a first preset temperature, and maintaining a first preset oxygen partial pressure; utilizing excimer pulse laser to radiate the surface of the hafnium tantalate ceramic target material; enabling the hafnium tantalate to grow to a preset thickness on the zirconium oxide single crystal substrate; and under a second preset oxygen partial pressure condition, adjusting the preset zirconium oxide single crystal substrate to a second preset temperature, carrying out in-situ annealing, and cooling to a third preset temperature to obtain the hafnium tantalate single crystal epitaxial film. According to the method, epitaxial growth of the hafnium tantalate single crystal film can be achieved, the obtained film is good in epitaxy, has the single orientation characteristic and is controllable in thickness and surface flatness, and research on the intrinsic performance of a hafnium tantalate material is facilitated.
本发明涉及一种具有调制结构的钽酸铪单晶外延薄膜及其制备方法，制备方法包括：制备钽酸铪陶瓷靶材和酸处理氧化锆单晶衬底表面；将氧化锆单晶衬底加热至第一预设温度，并维持第一预设氧分压；利用准分子脉冲激光辐射钽酸铪陶瓷靶材的表面；使钽酸铪在氧化锆单晶衬底生长至预设厚度；在第二预设氧分压条件下，将预设的氧化锆单晶衬底调整至第二预设温度，并进行原位退火，降温至第三预设温度，得到钽酸铪单晶外延薄膜。本发明可实现钽酸铪单晶薄膜的外延生长，所得薄膜外延性较好，具有单一取向特征，厚度与表面平整度可控，有助于开展钽酸铪材料本征性能的研究。
Hafnium tantalate single crystal epitaxial film with modulation structure and preparation method of hafnium tantalate single crystal epitaxial film
The invention relates to a hafnium tantalate single-crystal epitaxial film with a modulation structure and a preparation method thereof. The preparation method comprises the following steps: preparing a hafnium tantalate ceramic target material and carrying out acid treatment on the surface of a zirconium oxide single-crystal substrate; heating the zirconium oxide single crystal substrate to a first preset temperature, and maintaining a first preset oxygen partial pressure; utilizing excimer pulse laser to radiate the surface of the hafnium tantalate ceramic target material; enabling the hafnium tantalate to grow to a preset thickness on the zirconium oxide single crystal substrate; and under a second preset oxygen partial pressure condition, adjusting the preset zirconium oxide single crystal substrate to a second preset temperature, carrying out in-situ annealing, and cooling to a third preset temperature to obtain the hafnium tantalate single crystal epitaxial film. According to the method, epitaxial growth of the hafnium tantalate single crystal film can be achieved, the obtained film is good in epitaxy, has the single orientation characteristic and is controllable in thickness and surface flatness, and research on the intrinsic performance of a hafnium tantalate material is facilitated.
本发明涉及一种具有调制结构的钽酸铪单晶外延薄膜及其制备方法，制备方法包括：制备钽酸铪陶瓷靶材和酸处理氧化锆单晶衬底表面；将氧化锆单晶衬底加热至第一预设温度，并维持第一预设氧分压；利用准分子脉冲激光辐射钽酸铪陶瓷靶材的表面；使钽酸铪在氧化锆单晶衬底生长至预设厚度；在第二预设氧分压条件下，将预设的氧化锆单晶衬底调整至第二预设温度，并进行原位退火，降温至第三预设温度，得到钽酸铪单晶外延薄膜。本发明可实现钽酸铪单晶薄膜的外延生长，所得薄膜外延性较好，具有单一取向特征，厚度与表面平整度可控，有助于开展钽酸铪材料本征性能的研究。
Hafnium tantalate single crystal epitaxial film with modulation structure and preparation method of hafnium tantalate single crystal epitaxial film
一种具有调制结构的钽酸铪单晶外延薄膜及其制备方法
SUN YU (author) / FAN CHAOFAN (author) / ZHU JIALONG (author) / ZHOU YICHUN (author) / YANG LI (author)
2024-02-27
Patent
Electronic Resource
Chinese
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