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Low-temperature sintered low-dielectric microwave dielectric ceramic material and electronic component
The invention discloses a low-temperature sintered low-dielectric microwave dielectric ceramic material and an electronic component. The low-temperature sintered low-dielectric microwave dielectric ceramic material comprises the following components in percentage by weight: 8-14% of Li2O; 28 to 35 percent of Al2O3; 50 to 56 percent of SiO2; 0.1 to 4 percent of B2O3; 2 to 7 percent of TiO2; 0 to 3% of at least one of Bi2O3, V2O5, and P2O5; and 0.1 to 1% of K2O. The low-temperature sintering low-dielectric microwave ceramic material meets low-temperature sintering (below 900 DEG C), has a low dielectric constant (K < 5), low loss (tan delta < 0.3%) and a low thermal expansion coefficient (alpha: 2-5ppm/DEG C), and is suitable for an LTCC lamination process, and an LTCC device prepared from the material is matched with silicon-based chip integration.
本发明公开了一种低温烧结低介电微波介质陶瓷材料及电子部件，所述低温烧结低介电微波介质陶瓷材料包括如下重量百分比的各组分：Li2O：8～14％；Al2O3：28～35％；SiO2：50～56％；B2O3:0.1～4％；TiO2:2～7％；Bi2O3、V2O5、P2O5中的至少一者：0～3％；K2O:0.1～1％。本发明的低温烧结低介电微波陶瓷材料满足低温烧结(900℃以下)，具有低介电常数(K＜5)、低损耗(tanδ＜0.3％)及低热膨胀系数(α：2～5ppm/℃)，适用于LTCC叠层工艺，采用该材料制备的LTCC器件与硅基芯片集成相匹配。
Low-temperature sintered low-dielectric microwave dielectric ceramic material and electronic component
The invention discloses a low-temperature sintered low-dielectric microwave dielectric ceramic material and an electronic component. The low-temperature sintered low-dielectric microwave dielectric ceramic material comprises the following components in percentage by weight: 8-14% of Li2O; 28 to 35 percent of Al2O3; 50 to 56 percent of SiO2; 0.1 to 4 percent of B2O3; 2 to 7 percent of TiO2; 0 to 3% of at least one of Bi2O3, V2O5, and P2O5; and 0.1 to 1% of K2O. The low-temperature sintering low-dielectric microwave ceramic material meets low-temperature sintering (below 900 DEG C), has a low dielectric constant (K < 5), low loss (tan delta < 0.3%) and a low thermal expansion coefficient (alpha: 2-5ppm/DEG C), and is suitable for an LTCC lamination process, and an LTCC device prepared from the material is matched with silicon-based chip integration.
本发明公开了一种低温烧结低介电微波介质陶瓷材料及电子部件，所述低温烧结低介电微波介质陶瓷材料包括如下重量百分比的各组分：Li2O：8～14％；Al2O3：28～35％；SiO2：50～56％；B2O3:0.1～4％；TiO2:2～7％；Bi2O3、V2O5、P2O5中的至少一者：0～3％；K2O:0.1～1％。本发明的低温烧结低介电微波陶瓷材料满足低温烧结(900℃以下)，具有低介电常数(K＜5)、低损耗(tanδ＜0.3％)及低热膨胀系数(α：2～5ppm/℃)，适用于LTCC叠层工艺，采用该材料制备的LTCC器件与硅基芯片集成相匹配。
Low-temperature sintered low-dielectric microwave dielectric ceramic material and electronic component
一种低温烧结低介电微波介质陶瓷材料及电子部件
ZHENG LANXIANG (author) / WENG GUMING (author) / NIE MIN (author)
2024-03-12
Patent
Electronic Resource
Chinese
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