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Method for weak-oxidation low-temperature sintering of silicon carbide honeycomb ceramic carrier
The invention discloses a method for weak-oxidation low-temperature sintering of a silicon carbide honeycomb ceramic carrier. The method comprises the following steps: pushing a kiln car loaded with green bodies into a gas furnace; heating to 100 DEG C at a heating rate of 1-2 DEG C/min, and keeping the temperature for 1.5 h; raising the temperature to 150 DEG C at the temperature raising speed of 0.8-1.5 DEG C/min; raising the temperature to 450 DEG C at the temperature raising rate of 0.4-1.0 DEG C/min; heating to 650 DEG C at the heating rate of 1-2 DEG C/min, and keeping the temperature for 2h; the temperature is raised to 1200 DEG C at the heating rate of 1-2 DEG C/min, and the oxygen content in the furnace is gradually reduced during sintering; keeping the temperature for 4 hours after the temperature reaches 1200 DEG C; and stopping heating, naturally cooling to 800 DEG C along with the furnace, starting a combustion fan and a smoke exhaust fan, continuously cooling to 150 DEG C, and discharging from the furnace. According to the method, degreasing-sintering integrated sintering is realized, and the sintered silicon carbide honeycomb ceramic carrier has the characteristics of low thermal expansion coefficient and narrow aperture.
本发明公开了一种弱氧化低温烧结碳化硅蜂窝陶瓷载体的方法，包括如下步骤：将装载生坯的窑车推入燃气炉内；以1～2℃/min的升温速率升温至100℃，保温1.5h；以0.8～1.5℃/min的升温速度升温至150℃；以0.4～1.0℃/min的升温速率升温至450℃；以1～2℃/min的升温速率升温至650℃，保温2h；以1～2℃/min的升温速率升温至1200℃，烧结中逐渐降低炉内氧气含量；温度达到1200℃后，保温4h；停止加热，随炉自然冷却至800℃，打开助燃风机与排烟风机，继续降温至150℃即可出炉。该方法实现了脱脂‑烧结一体式烧结，烧结出的碳化硅蜂窝陶瓷载体具有低热膨胀系数、窄孔径的特点。
Method for weak-oxidation low-temperature sintering of silicon carbide honeycomb ceramic carrier
The invention discloses a method for weak-oxidation low-temperature sintering of a silicon carbide honeycomb ceramic carrier. The method comprises the following steps: pushing a kiln car loaded with green bodies into a gas furnace; heating to 100 DEG C at a heating rate of 1-2 DEG C/min, and keeping the temperature for 1.5 h; raising the temperature to 150 DEG C at the temperature raising speed of 0.8-1.5 DEG C/min; raising the temperature to 450 DEG C at the temperature raising rate of 0.4-1.0 DEG C/min; heating to 650 DEG C at the heating rate of 1-2 DEG C/min, and keeping the temperature for 2h; the temperature is raised to 1200 DEG C at the heating rate of 1-2 DEG C/min, and the oxygen content in the furnace is gradually reduced during sintering; keeping the temperature for 4 hours after the temperature reaches 1200 DEG C; and stopping heating, naturally cooling to 800 DEG C along with the furnace, starting a combustion fan and a smoke exhaust fan, continuously cooling to 150 DEG C, and discharging from the furnace. According to the method, degreasing-sintering integrated sintering is realized, and the sintered silicon carbide honeycomb ceramic carrier has the characteristics of low thermal expansion coefficient and narrow aperture.
本发明公开了一种弱氧化低温烧结碳化硅蜂窝陶瓷载体的方法，包括如下步骤：将装载生坯的窑车推入燃气炉内；以1～2℃/min的升温速率升温至100℃，保温1.5h；以0.8～1.5℃/min的升温速度升温至150℃；以0.4～1.0℃/min的升温速率升温至450℃；以1～2℃/min的升温速率升温至650℃，保温2h；以1～2℃/min的升温速率升温至1200℃，烧结中逐渐降低炉内氧气含量；温度达到1200℃后，保温4h；停止加热，随炉自然冷却至800℃，打开助燃风机与排烟风机，继续降温至150℃即可出炉。该方法实现了脱脂‑烧结一体式烧结，烧结出的碳化硅蜂窝陶瓷载体具有低热膨胀系数、窄孔径的特点。
Method for weak-oxidation low-temperature sintering of silicon carbide honeycomb ceramic carrier
一种弱氧化低温烧结碳化硅蜂窝陶瓷载体的方法
PENG YIYUAN (author) / LI SHUNHAI (author) / PAN HONGJIAN (author) / YANG MENGJIAO (author) / YANG LUMING (author) / WU SHIYAO (author) / ZHANG HAIBO (author)
2024-03-29
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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