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Method for preparing silicon carbide material through precursor in-situ curing and silicon carbide material
The invention relates to the technical field of preparation of silicon carbide ceramics, and particularly provides a method for preparing a silicon carbide material through precursor in-situ curing and the silicon carbide material.The method comprises the steps that S1, an active precursor is screened; s2, preparing a precursor solution from an active precursor and a composite solvent, wherein the mass fraction of the active precursor is greater than 30%; s3, fully dipping the porous silicon carbide preform in a precursor solution of carbon; s4, a curing agent with the mass fraction being 1%-10% is added; s5, taking out the porous silicon carbide preform when the porous silicon carbide preform is completely converted into a solid, and cleaning the porous silicon carbide preform; s6, performing carbonization treatment on the cleaned porous silicon carbide preform, and converting the active precursor into cracked carbon in the porous silicon carbide preform to prepare a silicon carbide material; according to the method, large-size silicon carbide is modified through precursor in-situ curing, meanwhile, a drying and curing process is omitted, and the preparation period is shortened.
本发明涉及碳化硅陶瓷制备技术领域，具体提供一种前驱体原位固化制备碳化硅材料的方法以及碳化硅材料，方法包括步骤：S1:筛选活性前驱体；S2：将活性前驱体与复合溶剂配制前驱体溶液，活性前驱体的质量分数大于30％；S3：将多孔碳化硅预制体置于碳的前驱体溶液中充分浸渍；S4：添加质量分数为1％～10％的固化剂；S5：完全转变为固体时，取出多孔碳化硅预制体，进行清理；S6：对清理过的多孔碳化硅预制体进行碳化处理，活性前驱体在多孔碳化硅预制体内转变为裂解碳，制备得到碳化硅材料；本发明的方法通过前驱体原位固化改性大尺寸碳化硅，同时省略了干燥固化工艺，缩短制备周期。
Method for preparing silicon carbide material through precursor in-situ curing and silicon carbide material
The invention relates to the technical field of preparation of silicon carbide ceramics, and particularly provides a method for preparing a silicon carbide material through precursor in-situ curing and the silicon carbide material.The method comprises the steps that S1, an active precursor is screened; s2, preparing a precursor solution from an active precursor and a composite solvent, wherein the mass fraction of the active precursor is greater than 30%; s3, fully dipping the porous silicon carbide preform in a precursor solution of carbon; s4, a curing agent with the mass fraction being 1%-10% is added; s5, taking out the porous silicon carbide preform when the porous silicon carbide preform is completely converted into a solid, and cleaning the porous silicon carbide preform; s6, performing carbonization treatment on the cleaned porous silicon carbide preform, and converting the active precursor into cracked carbon in the porous silicon carbide preform to prepare a silicon carbide material; according to the method, large-size silicon carbide is modified through precursor in-situ curing, meanwhile, a drying and curing process is omitted, and the preparation period is shortened.
本发明涉及碳化硅陶瓷制备技术领域，具体提供一种前驱体原位固化制备碳化硅材料的方法以及碳化硅材料，方法包括步骤：S1:筛选活性前驱体；S2：将活性前驱体与复合溶剂配制前驱体溶液，活性前驱体的质量分数大于30％；S3：将多孔碳化硅预制体置于碳的前驱体溶液中充分浸渍；S4：添加质量分数为1％～10％的固化剂；S5：完全转变为固体时，取出多孔碳化硅预制体，进行清理；S6：对清理过的多孔碳化硅预制体进行碳化处理，活性前驱体在多孔碳化硅预制体内转变为裂解碳，制备得到碳化硅材料；本发明的方法通过前驱体原位固化改性大尺寸碳化硅，同时省略了干燥固化工艺，缩短制备周期。
Method for preparing silicon carbide material through precursor in-situ curing and silicon carbide material
前驱体原位固化制备碳化硅材料的方法以及碳化硅材料
LI WEI (author) / ZHANG GE (author) / CUI CONGCONG (author) / BAO JIANXUN (author) / GUO CONGHUI (author)
2024-04-02
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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