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Isostatic pressing graphite for semiconductor and preparation method of isostatic pressing graphite
The invention discloses a preparation method of graphite for semiconductor industry, which comprises the following steps: heating to 120-150 DEG C, putting Baosteel pitch coke, petroleum coke and natural graphite into a mixing and kneading pot, mixing for 60-90 minutes, adding sulfur and carbon fiber, adjusting the temperature of the mixing and kneading pot (a heat-conducting oil mold temperature controller) to 220-240 DEG C, then heating to 120-150 DEG C, stirring for 20-30 minutes, and cooling to room temperature to obtain the graphite for the semiconductor industry. Putting the high-softening-point asphalt into the mixing and kneading pot, and mixing for 180-210 minutes to prepare a mixture; after the mixed material is subjected to powder forming treatment, formed mixed material powder is sintered, so that a primary solid product is formed; the primary solid product is impregnated with asphalt liquid under the pressure of 3-4 MPa, the primary solid product impregnated with the asphalt liquid is roasted for 50-60 days at the temperature of 900-1000 DEG C, and a solid product is formed; and carrying out graphitization treatment on the solid product at the temperature of 2400-2800 DEG C to prepare the graphite for the semiconductor industry.
本发明公开了一种半导体行业用石墨制备方法，包括：在温度被加热到120‑150℃条件下，将宝钢沥青焦、石油焦、天然石墨放入混捏锅内混合60‑90分钟后，加入硫磺、碳纤维并将混捏锅(导热油模温机)温度调节至220‑240℃，然后，再将高软化点沥青放入所述混捏锅内混合180‑210分钟，制成混合料；在对所述混合料进行粉末形成处理后，对所形成的混合料粉末进行烧结，以形成初级固态产品；利用3‑4MPa压力将沥青液浸渍到所述初级固态产品上，并在900‑1000℃温度对浸渍好沥青液的初级固态产品焙烧50‑60天，形成固态产品；在2400‑2800℃温度对所述固态产品进行石墨化处理，以制成所述半导体行业用石墨。
Isostatic pressing graphite for semiconductor and preparation method of isostatic pressing graphite
The invention discloses a preparation method of graphite for semiconductor industry, which comprises the following steps: heating to 120-150 DEG C, putting Baosteel pitch coke, petroleum coke and natural graphite into a mixing and kneading pot, mixing for 60-90 minutes, adding sulfur and carbon fiber, adjusting the temperature of the mixing and kneading pot (a heat-conducting oil mold temperature controller) to 220-240 DEG C, then heating to 120-150 DEG C, stirring for 20-30 minutes, and cooling to room temperature to obtain the graphite for the semiconductor industry. Putting the high-softening-point asphalt into the mixing and kneading pot, and mixing for 180-210 minutes to prepare a mixture; after the mixed material is subjected to powder forming treatment, formed mixed material powder is sintered, so that a primary solid product is formed; the primary solid product is impregnated with asphalt liquid under the pressure of 3-4 MPa, the primary solid product impregnated with the asphalt liquid is roasted for 50-60 days at the temperature of 900-1000 DEG C, and a solid product is formed; and carrying out graphitization treatment on the solid product at the temperature of 2400-2800 DEG C to prepare the graphite for the semiconductor industry.
本发明公开了一种半导体行业用石墨制备方法，包括：在温度被加热到120‑150℃条件下，将宝钢沥青焦、石油焦、天然石墨放入混捏锅内混合60‑90分钟后，加入硫磺、碳纤维并将混捏锅(导热油模温机)温度调节至220‑240℃，然后，再将高软化点沥青放入所述混捏锅内混合180‑210分钟，制成混合料；在对所述混合料进行粉末形成处理后，对所形成的混合料粉末进行烧结，以形成初级固态产品；利用3‑4MPa压力将沥青液浸渍到所述初级固态产品上，并在900‑1000℃温度对浸渍好沥青液的初级固态产品焙烧50‑60天，形成固态产品；在2400‑2800℃温度对所述固态产品进行石墨化处理，以制成所述半导体行业用石墨。
Isostatic pressing graphite for semiconductor and preparation method of isostatic pressing graphite
一种半导体用等静压石墨及其制备方法
LIN YONG (author) / ZHU YUEHUI (author)
2024-04-26
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
Preparation method of isostatic pressing graphite material
| European Patent Office | 2022
| European Patent Office | 2022
Isostatic pressing graphite preparation device and preparation method
| European Patent Office | 2022