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Method for preparing centimeter-level molybdenum disulfide film under normal pressure
The invention discloses a method for preparing a centimeter-level molybdenum disulfide film under normal pressure, and belongs to the technical field of semiconductor material preparation. In the invention, a two-stage growth method is designed, in the first stage, molybdenum oxide is fused into molten soda-lime glass; in the second stage, under the catalysis of sodium ions, sulfur powder and molybdenum oxide react in the molten soda-lime glass to generate molybdenum disulfide, then the molybdenum disulfide is diffused to the surface of the molten glass, and finally, under the driving of carrier gas, a continuous film is deposited on a silicon dioxide/silicon substrate above. The centimeter-level high-quality molybdenum disulfide film directly synthesized on the silicon dioxide/silicon substrate is expected to be further applied to electrical devices.
本发明公开了一种常压制备厘米级二硫化钼薄膜的方法，属于半导体材料制备技术领域。本发明中，设计了一种两阶段生长法，第一阶段使氧化钼融入熔融态的钠钙玻璃；第二阶段在钠离子的催化下，硫粉和氧化钼在熔融态的钠钙玻璃内部反应生成二硫化钼，进而扩散到熔融态玻璃表面，最后在载气带动下，在上方的二氧化硅/硅衬底上沉积形成连续薄膜。本发明在二氧化硅/硅衬底直接合成的厘米级高质量二硫化钼薄膜，有望促进其在电学器件上的进一步应用。
Method for preparing centimeter-level molybdenum disulfide film under normal pressure
The invention discloses a method for preparing a centimeter-level molybdenum disulfide film under normal pressure, and belongs to the technical field of semiconductor material preparation. In the invention, a two-stage growth method is designed, in the first stage, molybdenum oxide is fused into molten soda-lime glass; in the second stage, under the catalysis of sodium ions, sulfur powder and molybdenum oxide react in the molten soda-lime glass to generate molybdenum disulfide, then the molybdenum disulfide is diffused to the surface of the molten glass, and finally, under the driving of carrier gas, a continuous film is deposited on a silicon dioxide/silicon substrate above. The centimeter-level high-quality molybdenum disulfide film directly synthesized on the silicon dioxide/silicon substrate is expected to be further applied to electrical devices.
本发明公开了一种常压制备厘米级二硫化钼薄膜的方法，属于半导体材料制备技术领域。本发明中，设计了一种两阶段生长法，第一阶段使氧化钼融入熔融态的钠钙玻璃；第二阶段在钠离子的催化下，硫粉和氧化钼在熔融态的钠钙玻璃内部反应生成二硫化钼，进而扩散到熔融态玻璃表面，最后在载气带动下，在上方的二氧化硅/硅衬底上沉积形成连续薄膜。本发明在二氧化硅/硅衬底直接合成的厘米级高质量二硫化钼薄膜，有望促进其在电学器件上的进一步应用。
Method for preparing centimeter-level molybdenum disulfide film under normal pressure
一种常压制备厘米级二硫化钼薄膜的方法
LI PINGJIAN (author) / LI XUESONG (author) / YAN LINYI (author) / WU XIAOJIAN (author)
2024-05-03
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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