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Anti-reduction high dielectric X7R dielectric ceramic material and preparation method thereof
The invention discloses an anti-reduction high dielectric X7R dielectric ceramic material and a preparation method thereof, and relates to the technical field of ceramic materials, and the raw materials of the formula comprise barium titanate powder, a dopant with an anti-reduction effect, impurities causing lattice distortion of the barium titanate powder, an oxide and a glass phase. A doping substance capable of capturing free electrons is added into a barium titanate principal crystalline phase, so that the reduction resistance of barium titanate is improved, the barium titanate-based dielectric ceramic and a nickel inner electrode can be co-fired in a reducing atmosphere, and when the barium titanate-based dielectric ceramic is sintered in the reducing atmosphere, oxygen in a barium titanate crystal lattice is easy to escape due to low oxygen pressure, so that the dielectric property of the dielectric ceramic is improved. And a large number of positively charged oxygen vacancies and free electrons are left in the crystal lattice, and the free electrons are easily captured by Ti < 4 + > in the barium titanate crystal lattice to form Ti < 3 + >, so that semiconductor formation of the barium titanate-based dielectric ceramic is caused, and the insulation resistance of the ceramic body is reduced. Impurities capable of causing lattice distortion of the barium titanate powder are added, so that the high dielectric constant of the sub-nano barium titanate powder is realized.
本发明公开了一种抗还原高介X7R介质陶瓷材料及其制备方法，涉及陶瓷材料技术领域，配方原料包括钛酸钡粉、具有抗还原作用的掺杂剂、引起钛酸钡粉晶格畸变的杂质、氧化物和玻璃相。在钛酸钡主晶相中加入可以俘获自由电子的掺杂物质，增加钛酸钡的抗还原性，使钛酸钡基介电陶瓷与镍内电极能够在还原性气氛中共烧，钛酸钡基介质陶瓷在还原气氛下烧结时，由于氧分压低，所以钛酸钡晶格中的氧容易逸出来，而在晶格内部留下大量带正电的氧空位和自由电子，而自由电子容易被钛酸钡晶格中的Ti4+俘获形成Ti3+，导致钛酸钡基介电陶瓷的半导体化，使瓷体绝缘电阻降低。加入能够引起钛酸钡粉晶格畸变的杂质，实现亚纳米钛酸钡粉体的高介电常数。
Anti-reduction high dielectric X7R dielectric ceramic material and preparation method thereof
The invention discloses an anti-reduction high dielectric X7R dielectric ceramic material and a preparation method thereof, and relates to the technical field of ceramic materials, and the raw materials of the formula comprise barium titanate powder, a dopant with an anti-reduction effect, impurities causing lattice distortion of the barium titanate powder, an oxide and a glass phase. A doping substance capable of capturing free electrons is added into a barium titanate principal crystalline phase, so that the reduction resistance of barium titanate is improved, the barium titanate-based dielectric ceramic and a nickel inner electrode can be co-fired in a reducing atmosphere, and when the barium titanate-based dielectric ceramic is sintered in the reducing atmosphere, oxygen in a barium titanate crystal lattice is easy to escape due to low oxygen pressure, so that the dielectric property of the dielectric ceramic is improved. And a large number of positively charged oxygen vacancies and free electrons are left in the crystal lattice, and the free electrons are easily captured by Ti < 4 + > in the barium titanate crystal lattice to form Ti < 3 + >, so that semiconductor formation of the barium titanate-based dielectric ceramic is caused, and the insulation resistance of the ceramic body is reduced. Impurities capable of causing lattice distortion of the barium titanate powder are added, so that the high dielectric constant of the sub-nano barium titanate powder is realized.
本发明公开了一种抗还原高介X7R介质陶瓷材料及其制备方法，涉及陶瓷材料技术领域，配方原料包括钛酸钡粉、具有抗还原作用的掺杂剂、引起钛酸钡粉晶格畸变的杂质、氧化物和玻璃相。在钛酸钡主晶相中加入可以俘获自由电子的掺杂物质，增加钛酸钡的抗还原性，使钛酸钡基介电陶瓷与镍内电极能够在还原性气氛中共烧，钛酸钡基介质陶瓷在还原气氛下烧结时，由于氧分压低，所以钛酸钡晶格中的氧容易逸出来，而在晶格内部留下大量带正电的氧空位和自由电子，而自由电子容易被钛酸钡晶格中的Ti4+俘获形成Ti3+，导致钛酸钡基介电陶瓷的半导体化，使瓷体绝缘电阻降低。加入能够引起钛酸钡粉晶格畸变的杂质，实现亚纳米钛酸钡粉体的高介电常数。
Anti-reduction high dielectric X7R dielectric ceramic material and preparation method thereof
一种抗还原高介X7R介质陶瓷材料及其制备方法
LUO TING (author) / JIANG JUNJUN (author) / LI WEIWEI (author) / WANG XIAOLING (author) / LEE JAE-YOUNG (author)
2024-05-14
Patent
Electronic Resource
Chinese
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