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SrCuSi4O10-based low-dielectric low-loss composite LTCC (Low Temperature Co-Fired Ceramic) material and preparation method thereof
The invention belongs to the field of electronic ceramic materials and manufacturing thereof, and particularly relates to a SrCuSi4O10-based low-dielectric low-loss composite LTCC (Low Temperature Co-Fired Ceramic) material and a preparation method thereof. The SrCuSi4O10-based low-dielectric low-loss composite LTCC material is composed of two phases of SrCuSi4O10 and vanadate, the SrCuSi4O10 and the vanadate used in the inorganic chemical industry field and the optical field are directly compounded and sintered by a solid phase method according to the weight ratio of (100-x)% of SrCuSi4O10 + x% of Sr3V2O8/Ba3V2O8, the sintering temperature is 900-950 DEG C, the epsilon r is 8.6-9.1, the Q * f value is 23000-32600GHz, and the tau f is-10-10ppm/DEG C; the vanadate is Sr < 3 > V < 2 > O < 8 > or Ba3 V < 2 > O < 8 >. According to the invention, the advantages of ultralow dielectric constant, low loss and near-zero temperature coefficient of the LTCC material are simultaneously met, direct compounding is carried out without additional sintering aids, the cost is low, industrial application is easy, and the material has a very good application prospect in LTCC integrated devices and substrates.
本发明属于电子陶瓷材料及其制造领域，具体为一种SrCuSi4O10基低介低损耗复合LTCC材料及其制备方法。本发明的SrCuSi4O10基低介低损耗复合LTCC材料由SrCuSi4O10和钒酸盐两相构成，按重量配比(100‑x)％SrCuSi4O10+x％Sr3V2O8/Ba3V2O8将SrCuSi4O10和用于无机化工领域以及光学领域的钒酸盐两种预烧料以固相法直接复合烧结而成，烧结温度900～950℃，εr＝8.6～9.1，Q×f值23000～32600GHz，τf＝‑10～10ppm/℃；钒酸盐为Sr3V2O8或Ba3V2O8。本发明同时满足了LTCC材料超低介、低损耗以及近零温度系数的诸多优势，不需要额外的烧结助剂直接复合，且成本低易于工业化应用，在LTCC集成器件和基板中具有很好的应用前景。
SrCuSi4O10-based low-dielectric low-loss composite LTCC (Low Temperature Co-Fired Ceramic) material and preparation method thereof
The invention belongs to the field of electronic ceramic materials and manufacturing thereof, and particularly relates to a SrCuSi4O10-based low-dielectric low-loss composite LTCC (Low Temperature Co-Fired Ceramic) material and a preparation method thereof. The SrCuSi4O10-based low-dielectric low-loss composite LTCC material is composed of two phases of SrCuSi4O10 and vanadate, the SrCuSi4O10 and the vanadate used in the inorganic chemical industry field and the optical field are directly compounded and sintered by a solid phase method according to the weight ratio of (100-x)% of SrCuSi4O10 + x% of Sr3V2O8/Ba3V2O8, the sintering temperature is 900-950 DEG C, the epsilon r is 8.6-9.1, the Q * f value is 23000-32600GHz, and the tau f is-10-10ppm/DEG C; the vanadate is Sr < 3 > V < 2 > O < 8 > or Ba3 V < 2 > O < 8 >. According to the invention, the advantages of ultralow dielectric constant, low loss and near-zero temperature coefficient of the LTCC material are simultaneously met, direct compounding is carried out without additional sintering aids, the cost is low, industrial application is easy, and the material has a very good application prospect in LTCC integrated devices and substrates.
本发明属于电子陶瓷材料及其制造领域，具体为一种SrCuSi4O10基低介低损耗复合LTCC材料及其制备方法。本发明的SrCuSi4O10基低介低损耗复合LTCC材料由SrCuSi4O10和钒酸盐两相构成，按重量配比(100‑x)％SrCuSi4O10+x％Sr3V2O8/Ba3V2O8将SrCuSi4O10和用于无机化工领域以及光学领域的钒酸盐两种预烧料以固相法直接复合烧结而成，烧结温度900～950℃，εr＝8.6～9.1，Q×f值23000～32600GHz，τf＝‑10～10ppm/℃；钒酸盐为Sr3V2O8或Ba3V2O8。本发明同时满足了LTCC材料超低介、低损耗以及近零温度系数的诸多优势，不需要额外的烧结助剂直接复合，且成本低易于工业化应用，在LTCC集成器件和基板中具有很好的应用前景。
SrCuSi4O10-based low-dielectric low-loss composite LTCC (Low Temperature Co-Fired Ceramic) material and preparation method thereof
一种SrCuSi4O10基低介低损耗复合LTCC材料及其制备方法
TANG XIAOLI (author) / ZHAO ZHEN (author) / CHENG ZELAI (author) / SU HUA (author) / JING YULAN (author)
2024-06-04
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
| European Patent Office | 2024
| European Patent Office | 2023
| European Patent Office | 2024
| European Patent Office | 2024
| European Patent Office | 2024