A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Composite ion doped optimized low-dielectric high-Q silicate microwave dielectric ceramic and preparation method thereof
The invention discloses a composite ion doped optimized low-dielectric high-Q silicate microwave dielectric ceramic and a preparation method thereof, the chemical general formula of the composite ion doped optimized low-dielectric high-Q silicate microwave dielectric ceramic is Ca3Mg (Si1-xMgx/3Nb2x/3) 2O8, and x is more than or equal to 0.03 and less than or equal to 0.15. By controlling the molar ratio of SiO2, MgO and Nb2O5 to be (2-2x): (1 + 2x/3): (2x/3), the performance of Ca3MgSi2O8 ceramic is optimized to obtain the corresponding low-dielectric silicate microwave dielectric material, the quality factor of the Ca3MgSi2O8 ceramic is remarkably improved, and the obtained low-dielectric silicate microwave dielectric material has the dielectric constant epsilon r of 6.79-7.71, the quality factor Q.f of 135, 389-169 and 302GHz and the temperature coefficient of resonance frequency tau f of-47.34-57.33 ppm/DEG C. The low-dielectric high-Q microwave dielectric material provided by the invention meets the requirements of 5G/6G high-frequency communication, is simple in preparation process, and has a wide market application prospect.
本发明公开了一种复合离子掺杂优化低介高Q硅酸盐微波介质陶瓷及制备方法，其化学通式为Ca3Mg(Si1‑xMgx/3Nb2x/3)2O8，其中0.03≤x≤0.15。本发明通过控制SiO2、MgO和Nb2O5三种药品的摩尔比2‑2x∶1+2x/3∶2x/3对Ca3MgSi2O8陶瓷进行性能优化得到相应的低介硅酸盐微波介质材料，显著改善了Ca3MgSi2O8陶瓷的品质因数，得到了其介电常数εr＝6.79～7.71，品质因数Q·f＝135,389～169,302GHz，谐振频率温度系数τf＝‑47.34～‑57.33ppm/℃。本发明提供的低介高Q微波介质材料满足5G/6G高频通信的要求，且制备工艺简单，具有广阔的市场应用前景。
Composite ion doped optimized low-dielectric high-Q silicate microwave dielectric ceramic and preparation method thereof
The invention discloses a composite ion doped optimized low-dielectric high-Q silicate microwave dielectric ceramic and a preparation method thereof, the chemical general formula of the composite ion doped optimized low-dielectric high-Q silicate microwave dielectric ceramic is Ca3Mg (Si1-xMgx/3Nb2x/3) 2O8, and x is more than or equal to 0.03 and less than or equal to 0.15. By controlling the molar ratio of SiO2, MgO and Nb2O5 to be (2-2x): (1 + 2x/3): (2x/3), the performance of Ca3MgSi2O8 ceramic is optimized to obtain the corresponding low-dielectric silicate microwave dielectric material, the quality factor of the Ca3MgSi2O8 ceramic is remarkably improved, and the obtained low-dielectric silicate microwave dielectric material has the dielectric constant epsilon r of 6.79-7.71, the quality factor Q.f of 135, 389-169 and 302GHz and the temperature coefficient of resonance frequency tau f of-47.34-57.33 ppm/DEG C. The low-dielectric high-Q microwave dielectric material provided by the invention meets the requirements of 5G/6G high-frequency communication, is simple in preparation process, and has a wide market application prospect.
本发明公开了一种复合离子掺杂优化低介高Q硅酸盐微波介质陶瓷及制备方法，其化学通式为Ca3Mg(Si1‑xMgx/3Nb2x/3)2O8，其中0.03≤x≤0.15。本发明通过控制SiO2、MgO和Nb2O5三种药品的摩尔比2‑2x∶1+2x/3∶2x/3对Ca3MgSi2O8陶瓷进行性能优化得到相应的低介硅酸盐微波介质材料，显著改善了Ca3MgSi2O8陶瓷的品质因数，得到了其介电常数εr＝6.79～7.71，品质因数Q·f＝135,389～169,302GHz，谐振频率温度系数τf＝‑47.34～‑57.33ppm/℃。本发明提供的低介高Q微波介质材料满足5G/6G高频通信的要求，且制备工艺简单，具有广阔的市场应用前景。
Composite ion doped optimized low-dielectric high-Q silicate microwave dielectric ceramic and preparation method thereof
一种复合离子掺杂优化低介高Q硅酸盐微波介质陶瓷及制备方法
WU HAITAO (author) / FENG ZHANBAI (author) / WANG DONGFENG (author) / XU XIANGYU (author)
2024-06-04
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
Copper ion doped calcium silicate microwave dielectric ceramic and preparation method thereof
| European Patent Office | 2022
Silicate microwave dielectric ceramic material and preparation method thereof
| European Patent Office | 2021
Silicate microwave dielectric ceramic with low dielectric constant and preparation method thereof
| European Patent Office | 2022
| European Patent Office | 2021
High-dielectric microwave dielectric ceramic and preparation method thereof
| European Patent Office | 2021