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Silicon carbide film forming device and preparation process of silicon carbide film
The invention relates to the technical field of semiconductor material preparation, and particularly discloses a silicon carbide film forming device and a silicon carbide film preparation process thereof, and the silicon carbide film forming device comprises the steps of S1, biological template preparation, S2, surface modification, S3, solution preparation, S4, biological template dipping, S5, silicon carbide film growth, S6, surface modification and optimization, and S7, characterization and testing. According to the method, natural structures of diatom, bacteria or other microorganisms are used as the template, the high control capability on the structure morphology is provided, the size control from the micron level to the nanometer level can be achieved, the complex and porous silicon carbide film structure can be obtained, and the method can be applied to preparation of nanometer devices; compared with a traditional nano material preparation method, the method is more environmentally friendly, a large number of organic solvents and high-temperature treatment are not needed, the interaction between the carbon source precursor and the biological template can be regulated and controlled by modifying the surface of the biological template, and then the surface property of the film is regulated and controlled.
本发明涉及半导体材料制备技术领域，具体公开了一种碳化硅薄膜成型装置及其碳化硅薄膜的制备工艺，包括：S1、生物模板准备，S2、表面修饰，S3、溶液制备，S4、生物模板浸渍，S5、碳化硅薄膜的生长，S6、表面修饰和优化以及S7、表征与测试；本发明利用硅藻、细菌或其他微生物的天然结构作为模板，提供了对结构形貌的高度控制能力，可以实现微米到纳米级别的尺寸控制，可以获得复杂、多孔的碳化硅薄膜结构，可以应用于纳米器件制备，由于使用生物来源的模板，相对于传统的纳米材料制备方法，这种方法更为环保，不需要使用大量的有机溶剂和高温处理，通过对生物模板表面进行修饰，可以调控碳源前体与生物模板的相互作用，进而调控薄膜的表面性质。
Silicon carbide film forming device and preparation process of silicon carbide film
The invention relates to the technical field of semiconductor material preparation, and particularly discloses a silicon carbide film forming device and a silicon carbide film preparation process thereof, and the silicon carbide film forming device comprises the steps of S1, biological template preparation, S2, surface modification, S3, solution preparation, S4, biological template dipping, S5, silicon carbide film growth, S6, surface modification and optimization, and S7, characterization and testing. According to the method, natural structures of diatom, bacteria or other microorganisms are used as the template, the high control capability on the structure morphology is provided, the size control from the micron level to the nanometer level can be achieved, the complex and porous silicon carbide film structure can be obtained, and the method can be applied to preparation of nanometer devices; compared with a traditional nano material preparation method, the method is more environmentally friendly, a large number of organic solvents and high-temperature treatment are not needed, the interaction between the carbon source precursor and the biological template can be regulated and controlled by modifying the surface of the biological template, and then the surface property of the film is regulated and controlled.
本发明涉及半导体材料制备技术领域，具体公开了一种碳化硅薄膜成型装置及其碳化硅薄膜的制备工艺，包括：S1、生物模板准备，S2、表面修饰，S3、溶液制备，S4、生物模板浸渍，S5、碳化硅薄膜的生长，S6、表面修饰和优化以及S7、表征与测试；本发明利用硅藻、细菌或其他微生物的天然结构作为模板，提供了对结构形貌的高度控制能力，可以实现微米到纳米级别的尺寸控制，可以获得复杂、多孔的碳化硅薄膜结构，可以应用于纳米器件制备，由于使用生物来源的模板，相对于传统的纳米材料制备方法，这种方法更为环保，不需要使用大量的有机溶剂和高温处理，通过对生物模板表面进行修饰，可以调控碳源前体与生物模板的相互作用，进而调控薄膜的表面性质。
Silicon carbide film forming device and preparation process of silicon carbide film
一种碳化硅薄膜成型装置及其碳化硅薄膜的制备工艺
WANG WEIZHE (author) / LI MEIRONG (author) / WANG CHUANGLEI (author) / ZHANG MENGLONG (author)
2024-06-07
Patent
Electronic Resource
Chinese
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