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The invention relates to silicon carbide ceramic and a preparation method thereof. The preparation raw materials comprise modified nano silicon carbide, a sintering aid and carbon powder, the modified nano silicon carbide comprises nano alpha-silicon carbide and a polymer resin layer, and the polymer resin layer is coated on the surface of the nano alpha-silicon carbide. According to the silicon carbide ceramic, the surface of the nano silicon carbide is grafted and coated with the polymer resin layer, so that agglomeration of the nano silicon carbide can be prevented, and the sintering uniformity of a ceramic blank is improved; meanwhile, the polymer resin layer coated on the surface of the nano silicon carbide is subjected to in-situ carbonization in the degreasing and sintering processes to form a carbon black layer, so that the sintering of the ultra-fine grain silicon carbide ceramic is promoted, and the uniformity of a grain structure and the heat conductivity of the silicon carbide ceramic are improved; by selecting alpha-silicon carbide to cooperate with the sintering aid and the carbon black, rapid densification of ceramic crystal grains can be realized, abnormal growth of the crystal grains is prevented, the compactness and uniformity of the silicon carbide ceramic crystal grains are further improved, and the mechanical property and heat-conducting property of the silicon carbide ceramic are further improved.
本发明涉及一种碳化硅陶瓷及其制备方法。其制备原料包括改性纳米碳化硅、烧结助剂和碳粉;改性纳米碳化硅包括纳米α‑碳化硅和聚合物树脂层,聚合物树脂层包覆在纳米α‑碳化硅的表面。上述碳化硅陶瓷,通过在纳米碳化硅表面接枝包覆聚合物树脂层可以防止纳米碳化硅团聚,提升陶瓷胚体的烧结均匀性;同时包覆在纳米碳化硅表面的聚合物树脂层在脱脂和烧结过程中发生原位碳化,形成炭黑层,促进超细晶粒碳化硅陶瓷的烧结,提高晶粒结构的均匀性和碳化硅陶瓷的热导率;选用α‑碳化硅协同烧结助剂和炭黑能够使实现陶瓷晶粒的快速致密化,防止晶粒异常长大,进一步提高碳化硅陶瓷晶粒的致密性和均匀性,进而提高碳化硅陶瓷的力学性能和导热性能。
The invention relates to silicon carbide ceramic and a preparation method thereof. The preparation raw materials comprise modified nano silicon carbide, a sintering aid and carbon powder, the modified nano silicon carbide comprises nano alpha-silicon carbide and a polymer resin layer, and the polymer resin layer is coated on the surface of the nano alpha-silicon carbide. According to the silicon carbide ceramic, the surface of the nano silicon carbide is grafted and coated with the polymer resin layer, so that agglomeration of the nano silicon carbide can be prevented, and the sintering uniformity of a ceramic blank is improved; meanwhile, the polymer resin layer coated on the surface of the nano silicon carbide is subjected to in-situ carbonization in the degreasing and sintering processes to form a carbon black layer, so that the sintering of the ultra-fine grain silicon carbide ceramic is promoted, and the uniformity of a grain structure and the heat conductivity of the silicon carbide ceramic are improved; by selecting alpha-silicon carbide to cooperate with the sintering aid and the carbon black, rapid densification of ceramic crystal grains can be realized, abnormal growth of the crystal grains is prevented, the compactness and uniformity of the silicon carbide ceramic crystal grains are further improved, and the mechanical property and heat-conducting property of the silicon carbide ceramic are further improved.
本发明涉及一种碳化硅陶瓷及其制备方法。其制备原料包括改性纳米碳化硅、烧结助剂和碳粉;改性纳米碳化硅包括纳米α‑碳化硅和聚合物树脂层,聚合物树脂层包覆在纳米α‑碳化硅的表面。上述碳化硅陶瓷,通过在纳米碳化硅表面接枝包覆聚合物树脂层可以防止纳米碳化硅团聚,提升陶瓷胚体的烧结均匀性;同时包覆在纳米碳化硅表面的聚合物树脂层在脱脂和烧结过程中发生原位碳化,形成炭黑层,促进超细晶粒碳化硅陶瓷的烧结,提高晶粒结构的均匀性和碳化硅陶瓷的热导率;选用α‑碳化硅协同烧结助剂和炭黑能够使实现陶瓷晶粒的快速致密化,防止晶粒异常长大,进一步提高碳化硅陶瓷晶粒的致密性和均匀性,进而提高碳化硅陶瓷的力学性能和导热性能。
European Patent Office | 2023
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