A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Low dielectric microwave dielectric ceramic with positive resonant frequency temperature coefficient and preparation method thereof
The invention discloses a low dielectric microwave dielectric ceramic with a positive resonant frequency temperature coefficient and a preparation method thereof. Raw materials of SrCO3 and Ga2O3 are mixed according to the stoichiometric ratio of the chemical formula of SrGa12O19, and a traditional high-temperature solid-phase synthesis method is adopted for preparation. The preparation method is simple, the dielectric constant (epsilon r) of the prepared low-dielectric microwave dielectric ceramic material is 14.0-15.5, the quality factor (Q * f) is 35000-115000 GHz, and the temperature coefficient of resonance frequency (tau f) is + 60.0 ppm/DEG C to + 68.0 ppm/DEG C.
本发明公开了一种具有正谐振频率温度系数的低介微波介质陶瓷及其制备方法。将原料SrCO3和Ga2O3按照化学式为SrGa12O19的化学计量比配料，采用传统的高温固相合成法制备。本发明制备方法简单，制备得到的低介微波介质陶瓷材料的介电常数(εr)为14.0～15.5，品质因数(Q×f)为35000～115000 GHz，谐振频率温度系数(τf)为+60.0 ppm/℃～+68.0 ppm/℃。
Low dielectric microwave dielectric ceramic with positive resonant frequency temperature coefficient and preparation method thereof
The invention discloses a low dielectric microwave dielectric ceramic with a positive resonant frequency temperature coefficient and a preparation method thereof. Raw materials of SrCO3 and Ga2O3 are mixed according to the stoichiometric ratio of the chemical formula of SrGa12O19, and a traditional high-temperature solid-phase synthesis method is adopted for preparation. The preparation method is simple, the dielectric constant (epsilon r) of the prepared low-dielectric microwave dielectric ceramic material is 14.0-15.5, the quality factor (Q * f) is 35000-115000 GHz, and the temperature coefficient of resonance frequency (tau f) is + 60.0 ppm/DEG C to + 68.0 ppm/DEG C.
本发明公开了一种具有正谐振频率温度系数的低介微波介质陶瓷及其制备方法。将原料SrCO3和Ga2O3按照化学式为SrGa12O19的化学计量比配料，采用传统的高温固相合成法制备。本发明制备方法简单，制备得到的低介微波介质陶瓷材料的介电常数(εr)为14.0～15.5，品质因数(Q×f)为35000～115000 GHz，谐振频率温度系数(τf)为+60.0 ppm/℃～+68.0 ppm/℃。
Low dielectric microwave dielectric ceramic with positive resonant frequency temperature coefficient and preparation method thereof
一种具有正谐振频率温度系数的低介微波介质陶瓷及其制备方法
TANG YING (author) / YANG YANG (author) / FANG WEISHUANG (author) / FANG LIANG (author) / LIN HUIXING (author) / YANG JUNFENG (author)
2024-06-14
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
| European Patent Office | 2021
| European Patent Office | 2015
| European Patent Office | 2021
| European Patent Office | 2015