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Bi < 3 + > and Y < 3 + > co-doped AgNbO3 anti-ferroelectric energy storage ceramic material as well as preparation method and application thereof
The invention discloses a Bi < 3 + > and Y < 3 + > co-doped AgNbO3 antiferroelectric energy storage ceramic material and a preparation method and application thereof, the chemical formula of the energy storage ceramic material is Ag < 1-3x > Bi < x > Nb < 1-3x/5Y < x > O3, x is greater than 0 and less than or equal to 0.01, and Bi < 3 + > and Y < 3 + > are co-doped with AgNbO3 antiferroelectric energy storage ceramic material at A/B site. The invention also specifically discloses a preparation method of the Bi < 3 + > and Y < 3 + > co-doped AgNbO3 anti-ferroelectric energy storage ceramic material and application of the Bi < 3 + > and Y < 3 + > co-doped AgNbO3 anti-ferroelectric energy storage ceramic material in preparation of a ceramic The AgNbO3-based anti-ferroelectric energy storage ceramic material with the pbcm space group perovskite structure is prepared through a simple and easy-to-implement technical process, the breakdown field strength (Eb) of the material is improved, meanwhile, the remanent polarization value (Pr) is reduced, and the energy storage density and the stability of an anti-ferroelectric phase at the room temperature can be effectively improved.
本发明公开了一种Bi3+和Y3+共掺杂AgNbO3反铁电储能陶瓷材料及其制备方法和应用，该储能陶瓷材料的化学式为Ag1‑3xBixNb1‑3x/5YxO3，其中0＜x≤0.01，Bi3+和Y3+在A/B位共掺杂AgNbO3反铁电储能陶瓷材料。本发明还具体公开了该Bi3+和Y3+共掺杂AgNbO3反铁电储能陶瓷材料的制备方法及其在制备陶瓷电容器中的应用。本发明通过简单、易于实现的技术工艺制备出具有pbcm空间群钙钛矿结构的AgNbO3基反铁电储能陶瓷材料，在提高其击穿场强（Eb）的同时也降低剩余极化值（Pr），并且能够有效提高储能密度及室温下反铁电相的稳定性。
Bi < 3 + > and Y < 3 + > co-doped AgNbO3 anti-ferroelectric energy storage ceramic material as well as preparation method and application thereof
The invention discloses a Bi < 3 + > and Y < 3 + > co-doped AgNbO3 antiferroelectric energy storage ceramic material and a preparation method and application thereof, the chemical formula of the energy storage ceramic material is Ag < 1-3x > Bi < x > Nb < 1-3x/5Y < x > O3, x is greater than 0 and less than or equal to 0.01, and Bi < 3 + > and Y < 3 + > are co-doped with AgNbO3 antiferroelectric energy storage ceramic material at A/B site. The invention also specifically discloses a preparation method of the Bi < 3 + > and Y < 3 + > co-doped AgNbO3 anti-ferroelectric energy storage ceramic material and application of the Bi < 3 + > and Y < 3 + > co-doped AgNbO3 anti-ferroelectric energy storage ceramic material in preparation of a ceramic The AgNbO3-based anti-ferroelectric energy storage ceramic material with the pbcm space group perovskite structure is prepared through a simple and easy-to-implement technical process, the breakdown field strength (Eb) of the material is improved, meanwhile, the remanent polarization value (Pr) is reduced, and the energy storage density and the stability of an anti-ferroelectric phase at the room temperature can be effectively improved.
本发明公开了一种Bi3+和Y3+共掺杂AgNbO3反铁电储能陶瓷材料及其制备方法和应用，该储能陶瓷材料的化学式为Ag1‑3xBixNb1‑3x/5YxO3，其中0＜x≤0.01，Bi3+和Y3+在A/B位共掺杂AgNbO3反铁电储能陶瓷材料。本发明还具体公开了该Bi3+和Y3+共掺杂AgNbO3反铁电储能陶瓷材料的制备方法及其在制备陶瓷电容器中的应用。本发明通过简单、易于实现的技术工艺制备出具有pbcm空间群钙钛矿结构的AgNbO3基反铁电储能陶瓷材料，在提高其击穿场强（Eb）的同时也降低剩余极化值（Pr），并且能够有效提高储能密度及室温下反铁电相的稳定性。
Bi < 3 + > and Y < 3 + > co-doped AgNbO3 anti-ferroelectric energy storage ceramic material as well as preparation method and application thereof
一种Bi3+和Y3+共掺杂AgNbO3反铁电储能陶瓷材料及其制备方法和应用
SONG GUILIN (author) / JIANG JUNRU (author) / ZHU MIAOMIAO (author) / PAN QIANXI (author) / JIA PEIPEI (author) / ZHANG XIAOMING (author) / ZHANG NA (author)
2024-06-25
Patent
Electronic Resource
Chinese
Energy storage performance in BiMnO3-modified AgNbO3 anti-ferroelectric ceramics
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