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High-thermal-conductivity aluminum nitride ceramic substrate and preparation method thereof
The invention relates to a high-thermal-conductivity aluminum nitride ceramic substrate and a preparation method thereof, and relates to the field of electronic ceramics, the high-thermal-conductivity aluminum nitride ceramic substrate is prepared from aluminum nitride tape casting slurry, and the aluminum nitride tape casting slurry comprises the following components in parts by mass: 80-100 parts of modified aluminum nitride powder, 5-10 parts of a modified binder and 100-120 parts of a mixed solvent, 1-3 parts of a dispersant and 1-5 parts of a plasticizer. The aluminum nitride ceramic substrate has the effects of improving the density, heat conductivity and bending resistance of the aluminum nitride ceramic substrate, can efficiently dissipate heat, and can be used as a high-performance ceramic substrate material for assembling a super-large-scale integrated circuit.
本申请涉及一种高导热氮化铝陶瓷基板及其制备方法,涉及电子陶瓷领域,所述高导热氮化铝陶瓷基板采用氮化铝流延浆料制备,所述氮化铝流延浆料包括以下质量份数的组分:改性氮化铝粉体80‑100份,改性粘结剂5‑10份,混合溶剂100‑120份,分散剂1‑3份,增塑剂1‑5份。本申请具有提升氮化铝陶瓷基板致密度、热导率和抗弯性能的效果,能够高效的逸散热量,可作为组装超大规模集成电路的高性能陶瓷基板材料。
High-thermal-conductivity aluminum nitride ceramic substrate and preparation method thereof
The invention relates to a high-thermal-conductivity aluminum nitride ceramic substrate and a preparation method thereof, and relates to the field of electronic ceramics, the high-thermal-conductivity aluminum nitride ceramic substrate is prepared from aluminum nitride tape casting slurry, and the aluminum nitride tape casting slurry comprises the following components in parts by mass: 80-100 parts of modified aluminum nitride powder, 5-10 parts of a modified binder and 100-120 parts of a mixed solvent, 1-3 parts of a dispersant and 1-5 parts of a plasticizer. The aluminum nitride ceramic substrate has the effects of improving the density, heat conductivity and bending resistance of the aluminum nitride ceramic substrate, can efficiently dissipate heat, and can be used as a high-performance ceramic substrate material for assembling a super-large-scale integrated circuit.
本申请涉及一种高导热氮化铝陶瓷基板及其制备方法,涉及电子陶瓷领域,所述高导热氮化铝陶瓷基板采用氮化铝流延浆料制备,所述氮化铝流延浆料包括以下质量份数的组分:改性氮化铝粉体80‑100份,改性粘结剂5‑10份,混合溶剂100‑120份,分散剂1‑3份,增塑剂1‑5份。本申请具有提升氮化铝陶瓷基板致密度、热导率和抗弯性能的效果,能够高效的逸散热量,可作为组装超大规模集成电路的高性能陶瓷基板材料。
High-thermal-conductivity aluminum nitride ceramic substrate and preparation method thereof
一种高导热氮化铝陶瓷基板及其制备方法
LIU WEIPING (author) / CHEN ZHI (author) / TAN CHENGYE (author)
2024-06-28
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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