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A platform for research: civil engineering, architecture and urbanism
一种高储能的无铅弛豫铁电厚膜陶瓷及其制备方法和应用
本发明属于功能陶瓷技术领域，公开了一种高储能的无铅弛豫铁电厚膜陶瓷及其制备方法和应用。所述无铅弛豫铁电厚膜陶瓷的化学式为(Bi0.5‑0.5xNa0.5‑0.5xLax)(Ti1‑xMg0.66xTa0.33x)O3，x＝0.24。由于多离子掺杂增加弛豫度，增强了电介质温度和频率稳定性，提高了储能效率。此外，MgO(～7.7eV)和Ta2O5(～4eV)等宽带隙氧化物也能提高弛豫型铁电厚膜陶瓷的击穿场强。同时采用流延工艺降低陶瓷厚度，进一步提高击穿场强，该无铅弛豫铁电厚膜陶瓷可应用在功率脉冲器件中。
The invention belongs to the technical field of functional ceramics, and discloses a high-energy-storage lead-free relaxor ferroelectric thick-film ceramic as well as a preparation method and application thereof. The chemical formula of the lead-free relaxor ferroelectric thick film ceramic is (Bi < 0.5-0.5 > x < Na < 0.5-0.5 > x < Lax >) (Ti < 1-x > Mg < 0.66 > x < Ta < 0.33 > x) O3, wherein x is equal to 0.24. Due to multi-ion doping, the relaxation degree is increased, the dielectric temperature and frequency stability are enhanced, and the energy storage efficiency is improved. In addition, MgO (-7.7 eV), Ta2O5 (-4 eV) and other wide-band-gap oxides can also improve the breakdown field strength of the relaxation type ferroelectric thick-film ceramic. Meanwhile, the thickness of the ceramic is reduced by adopting a tape casting process, the breakdown field strength is further improved, and the lead-free relaxor ferroelectric thick-film ceramic can be applied to power pulse devices.
一种高储能的无铅弛豫铁电厚膜陶瓷及其制备方法和应用
本发明属于功能陶瓷技术领域，公开了一种高储能的无铅弛豫铁电厚膜陶瓷及其制备方法和应用。所述无铅弛豫铁电厚膜陶瓷的化学式为(Bi0.5‑0.5xNa0.5‑0.5xLax)(Ti1‑xMg0.66xTa0.33x)O3，x＝0.24。由于多离子掺杂增加弛豫度，增强了电介质温度和频率稳定性，提高了储能效率。此外，MgO(～7.7eV)和Ta2O5(～4eV)等宽带隙氧化物也能提高弛豫型铁电厚膜陶瓷的击穿场强。同时采用流延工艺降低陶瓷厚度，进一步提高击穿场强，该无铅弛豫铁电厚膜陶瓷可应用在功率脉冲器件中。
The invention belongs to the technical field of functional ceramics, and discloses a high-energy-storage lead-free relaxor ferroelectric thick-film ceramic as well as a preparation method and application thereof. The chemical formula of the lead-free relaxor ferroelectric thick film ceramic is (Bi < 0.5-0.5 > x < Na < 0.5-0.5 > x < Lax >) (Ti < 1-x > Mg < 0.66 > x < Ta < 0.33 > x) O3, wherein x is equal to 0.24. Due to multi-ion doping, the relaxation degree is increased, the dielectric temperature and frequency stability are enhanced, and the energy storage efficiency is improved. In addition, MgO (-7.7 eV), Ta2O5 (-4 eV) and other wide-band-gap oxides can also improve the breakdown field strength of the relaxation type ferroelectric thick-film ceramic. Meanwhile, the thickness of the ceramic is reduced by adopting a tape casting process, the breakdown field strength is further improved, and the lead-free relaxor ferroelectric thick-film ceramic can be applied to power pulse devices.