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Non-equimolar-ratio A-site high-entropy MeBi4Ti4O15 piezoelectric ceramic material and preparation method thereof
The invention relates to a non-equimolar ratio A-bit high-entropy MeBi4Ti4O15 piezoelectric ceramic material and a preparation method thereof, and the chemical formula of the obtained non-equimolar ratio A-bit high-entropy MeBi4Ti4O15 piezoelectric ceramic material is (Ca < x > Sr < (1-x)/3Ba < (1-x)/3Pb < (1-x)/3 >) Bi < 4 > Ti4O15, and (x is 0.25-0.7). The resistivity of the material is improved by using the high-entropy concept design, and meanwhile, the internal mass transfer velocity of the material can be slowed down in the sintering process due to the hysteresis diffusion effect brought by the high-entropy design, so that more refined grains are obtained, more grain boundaries are generated in the material, the grain boundaries can scatter electrons, and thus the resistivity of the material is improved. The transmission performance of electrons can be deteriorated due to lattice distortion and hysteresis diffusion effect, so that the resistivity of the material is improved, the room-temperature resistivity of the material can be improved from 1011 omega.cm to 5.52 * 10 < 13 > omega.cm, and the high-temperature resistivity at 550 DEG C can be improved from 9 * 10 < 5 > omega.cm to 1.53 * 10 < 7 > omega.cm. Meanwhile, due to the fact that different components contained in the high-entropy material have different basic characteristics and interact with one another, the Curie temperature can be increased to the highest 689 DEG C from 495 DEG C.
一种非等摩尔比A位高熵MeBi4Ti4O15压电陶瓷材料及其制备方法,得到的非等摩尔比A位高熵MeBi4Ti4O15压电陶瓷材料的化学式为(CaxSr(1‑x)/3Ba(1‑x)/3Pb(1‑x)/3)Bi4Ti4O15,(x=0.25‑0.7)。使用高熵概念设计以提高材料的电阻率,同时,高熵化设计带来的迟滞扩散效应能够在烧结过程中使材料内部传质速度减慢,从而获得更加细化的晶粒,使材料内部产生更多的晶界,晶界能够散射电子,带来的晶格畸变和迟滞扩散效应均能恶化电子的传输性能,从而提高材料的电阻率,其室温电阻率可从1011Ω·cm提升至5.52×1013Ω·cm,550℃时高温电阻率可从9×105Ω·cm提升至1.53×107Ω·cm。同时,由于高熵材料中含有的不同组元具有不同基本特性,以及它们之间的相互作用,使居里温度可从495℃提升至最高的689℃。
Non-equimolar-ratio A-site high-entropy MeBi4Ti4O15 piezoelectric ceramic material and preparation method thereof
The invention relates to a non-equimolar ratio A-bit high-entropy MeBi4Ti4O15 piezoelectric ceramic material and a preparation method thereof, and the chemical formula of the obtained non-equimolar ratio A-bit high-entropy MeBi4Ti4O15 piezoelectric ceramic material is (Ca < x > Sr < (1-x)/3Ba < (1-x)/3Pb < (1-x)/3 >) Bi < 4 > Ti4O15, and (x is 0.25-0.7). The resistivity of the material is improved by using the high-entropy concept design, and meanwhile, the internal mass transfer velocity of the material can be slowed down in the sintering process due to the hysteresis diffusion effect brought by the high-entropy design, so that more refined grains are obtained, more grain boundaries are generated in the material, the grain boundaries can scatter electrons, and thus the resistivity of the material is improved. The transmission performance of electrons can be deteriorated due to lattice distortion and hysteresis diffusion effect, so that the resistivity of the material is improved, the room-temperature resistivity of the material can be improved from 1011 omega.cm to 5.52 * 10 < 13 > omega.cm, and the high-temperature resistivity at 550 DEG C can be improved from 9 * 10 < 5 > omega.cm to 1.53 * 10 < 7 > omega.cm. Meanwhile, due to the fact that different components contained in the high-entropy material have different basic characteristics and interact with one another, the Curie temperature can be increased to the highest 689 DEG C from 495 DEG C.
一种非等摩尔比A位高熵MeBi4Ti4O15压电陶瓷材料及其制备方法,得到的非等摩尔比A位高熵MeBi4Ti4O15压电陶瓷材料的化学式为(CaxSr(1‑x)/3Ba(1‑x)/3Pb(1‑x)/3)Bi4Ti4O15,(x=0.25‑0.7)。使用高熵概念设计以提高材料的电阻率,同时,高熵化设计带来的迟滞扩散效应能够在烧结过程中使材料内部传质速度减慢,从而获得更加细化的晶粒,使材料内部产生更多的晶界,晶界能够散射电子,带来的晶格畸变和迟滞扩散效应均能恶化电子的传输性能,从而提高材料的电阻率,其室温电阻率可从1011Ω·cm提升至5.52×1013Ω·cm,550℃时高温电阻率可从9×105Ω·cm提升至1.53×107Ω·cm。同时,由于高熵材料中含有的不同组元具有不同基本特性,以及它们之间的相互作用,使居里温度可从495℃提升至最高的689℃。
Non-equimolar-ratio A-site high-entropy MeBi4Ti4O15 piezoelectric ceramic material and preparation method thereof
非等摩尔比A位高熵MeBi4Ti4O15压电陶瓷材料及其制备方法
GAO FENG (author) / LU MINGXIN (author) / XU XIAOYU (author) / FENG XIAOYING (author) / WEI ZIYAO (author) / MEI HUI (author) / XU JIE (author) / CHEN CHAO (author)
2024-07-09
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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