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Equiaxial beta-silicon nitride ceramic as well as preparation method and application thereof
The invention belongs to the technical field of ceramic materials, and discloses equiaxial beta-silicon nitride (Si3N4) ceramic as well as a preparation method and application thereof. The method comprises the following steps: carrying out ball milling and mixing on Si, an oxide, MgO-Re2O3 and a boron compound TiB2/ZrB2/HfB2 to obtain mixed powder, carrying out cold isostatic pressing on a green body, introducing 0.1-0.2 MPa of flowing N2 in a vacuum state at 600-800 DEG C, heating to 1350-1400 DEG C, cooling along with a furnace, introducing 0.1-0.2 MPa of Ar in a vacuum state at an axial pressure of 30-50 MPa, heating to 1480-1530 DEG C at a temperature of 1000-1200 DEG C, and carrying out hot pressing sintering to prepare the equiaxial beta-Si3N4 ceramic which has a high content of 90-100 wt% of a beta-Si3N4 phase. The beta-Si3N4 crystal grains subjected to low-temperature hot pressed sintering are equiaxial, and the method is simple in preparation process.
本发明属于陶瓷材料技术领域，公开了一种等轴状β‑氮化硅(Si3N4)陶瓷及其制备方法和应用。该方法将Si、氧化物、MgO‑Re2O3和硼化合物TiB2/ZrB2/HfB2球磨混合，得到混合粉体，再冷等静压成型生坯在真空状态600～800℃通入0.1～0.2MPa的流动N2，升温至1350～1400℃，随炉冷却，在真空下轴向压力为30～50MPa，1000～1200℃通入0.1～0.2MPa的Ar，升温至1480～1530℃热压烧结，制得等轴状β‑Si3N4陶瓷，其具有较高含量90～100wt％的β‑Si3N4相。本发明采用经低温热压烧结后β‑Si3N4晶粒为等轴状，该方法制备工艺简单。
Equiaxial beta-silicon nitride ceramic as well as preparation method and application thereof
The invention belongs to the technical field of ceramic materials, and discloses equiaxial beta-silicon nitride (Si3N4) ceramic as well as a preparation method and application thereof. The method comprises the following steps: carrying out ball milling and mixing on Si, an oxide, MgO-Re2O3 and a boron compound TiB2/ZrB2/HfB2 to obtain mixed powder, carrying out cold isostatic pressing on a green body, introducing 0.1-0.2 MPa of flowing N2 in a vacuum state at 600-800 DEG C, heating to 1350-1400 DEG C, cooling along with a furnace, introducing 0.1-0.2 MPa of Ar in a vacuum state at an axial pressure of 30-50 MPa, heating to 1480-1530 DEG C at a temperature of 1000-1200 DEG C, and carrying out hot pressing sintering to prepare the equiaxial beta-Si3N4 ceramic which has a high content of 90-100 wt% of a beta-Si3N4 phase. The beta-Si3N4 crystal grains subjected to low-temperature hot pressed sintering are equiaxial, and the method is simple in preparation process.
本发明属于陶瓷材料技术领域，公开了一种等轴状β‑氮化硅(Si3N4)陶瓷及其制备方法和应用。该方法将Si、氧化物、MgO‑Re2O3和硼化合物TiB2/ZrB2/HfB2球磨混合，得到混合粉体，再冷等静压成型生坯在真空状态600～800℃通入0.1～0.2MPa的流动N2，升温至1350～1400℃，随炉冷却，在真空下轴向压力为30～50MPa，1000～1200℃通入0.1～0.2MPa的Ar，升温至1480～1530℃热压烧结，制得等轴状β‑Si3N4陶瓷，其具有较高含量90～100wt％的β‑Si3N4相。本发明采用经低温热压烧结后β‑Si3N4晶粒为等轴状，该方法制备工艺简单。
Equiaxial beta-silicon nitride ceramic as well as preparation method and application thereof
一种等轴状β-氮化硅陶瓷及其制备方法和应用
YU JUNJIE (author) / YANG XIAOQING (author) / LIN JIAYUN (author) / LIN RUILIN (author)
2024-08-20
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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