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一种LiBaF3微波介质陶瓷的制备方法
本发明公开了一种LiBaF3微波介质陶瓷的制备方法，涉及微波通讯领域及低温共烧陶瓷介质材料领域，包括将LiF和BaF2粉末分别放于加热炉中进行一次煅烧、一次研磨、一次干燥、二次煅烧、二次研磨、二次干燥、过筛造粒；将制得的粉体原料压制成圆柱体，并冷等静压；最终烧结2小时以实现致密化，得到致密化的LiBaF3；本发明中LiBaF3微波介质材料的制备方法可以在较低温度下实现致密化；在该制备条件下，LiBaF3微波介质陶瓷具有较低的介电常数13.72，较高的品质73000GHz和近零的谐振频率温度系数‑35.74×10‑6/℃；同时，该LiBaF3微波介质陶瓷可以与Ag低温共存，是一种颇具应用潜力的新型微波介质材料。
The invention discloses a preparation method of novel LiBaF3 microwave dielectric ceramic, and relates to the field of microwave communication and the field of low-temperature co-fired ceramic dielectric materials.The preparation method comprises the steps that LiF powder and BaF2 powder are placed in a heating furnace to be subjected to primary calcination, primary grinding, primary drying, secondary calcination, secondary grinding, secondary drying and sieving granulation; pressing the prepared powder raw material into a cylinder, and carrying out cold isostatic pressing; finally sintering for 2 hours to realize densification, so as to obtain densified LiBaF3; according to the preparation method of the LiBaF3 microwave dielectric material, densification can be realized at a relatively low temperature; under the preparation condition, the LiBaF3 microwave dielectric ceramic has a relatively low dielectric constant of 13.72, relatively high quality of 73000GHz and a near-zero temperature coefficient of resonance frequency of-35.74 * 10 <-6 >/DEG C; meanwhile, the LiBaF3 microwave dielectric ceramic can coexist with Ag at low temperature, and is a novel microwave dielectric material with application potential.
一种LiBaF3微波介质陶瓷的制备方法
本发明公开了一种LiBaF3微波介质陶瓷的制备方法，涉及微波通讯领域及低温共烧陶瓷介质材料领域，包括将LiF和BaF2粉末分别放于加热炉中进行一次煅烧、一次研磨、一次干燥、二次煅烧、二次研磨、二次干燥、过筛造粒；将制得的粉体原料压制成圆柱体，并冷等静压；最终烧结2小时以实现致密化，得到致密化的LiBaF3；本发明中LiBaF3微波介质材料的制备方法可以在较低温度下实现致密化；在该制备条件下，LiBaF3微波介质陶瓷具有较低的介电常数13.72，较高的品质73000GHz和近零的谐振频率温度系数‑35.74×10‑6/℃；同时，该LiBaF3微波介质陶瓷可以与Ag低温共存，是一种颇具应用潜力的新型微波介质材料。
The invention discloses a preparation method of novel LiBaF3 microwave dielectric ceramic, and relates to the field of microwave communication and the field of low-temperature co-fired ceramic dielectric materials.The preparation method comprises the steps that LiF powder and BaF2 powder are placed in a heating furnace to be subjected to primary calcination, primary grinding, primary drying, secondary calcination, secondary grinding, secondary drying and sieving granulation; pressing the prepared powder raw material into a cylinder, and carrying out cold isostatic pressing; finally sintering for 2 hours to realize densification, so as to obtain densified LiBaF3; according to the preparation method of the LiBaF3 microwave dielectric material, densification can be realized at a relatively low temperature; under the preparation condition, the LiBaF3 microwave dielectric ceramic has a relatively low dielectric constant of 13.72, relatively high quality of 73000GHz and a near-zero temperature coefficient of resonance frequency of-35.74 * 10 <-6 >/DEG C; meanwhile, the LiBaF3 microwave dielectric ceramic can coexist with Ag at low temperature, and is a novel microwave dielectric material with application potential.
一种LiBaF3微波介质陶瓷的制备方法
2025-02-14
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
Growth of LiF/LiBaF3 eutectic scintillator crystals and their optical properties
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