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Method for improving piezoelectric property of piezoelectric ceramic
The invention provides a method for improving the piezoelectric property of piezoelectric ceramics. The method comprises the following steps: placing the piezoelectric ceramics in an oxygen atmosphere for annealing treatment; the temperature of the annealing treatment is 550-750 DEG C, the air pressure is 0.5-1.0 atmospheric pressure, and the time is 0.1-3.0 hours. The piezoelectric ceramic is placed in the oxygen atmosphere for annealing treatment, and the annealing condition is strictly limited, so that oxygen vacancies in the piezoelectric ceramic can be reduced, pinning of the oxygen vacancies to a ferroelectric domain is reduced, the contribution of the ferroelectric domain to the piezoelectric property is improved, and the macroscopic piezoelectric property is improved; and moreover, the complexity of the preparation process is not obviously increased, and the method can be directly applied to actual industrial production.
本发明提供了一种提高压电陶瓷压电性能的方法，包括以下步骤：将压电陶瓷置于氧气气氛中进行退火处理；所述退火处理的温度为550℃～750℃、气压为0.5～1.0大气压、时间为0.1‑3.0小时。通过将压电陶瓷置于氧气气氛中进行退火处理并严格限制退火的条件，这样能够减少压电陶瓷中的氧空位，降低氧空位对铁电畴的钉扎，从而提高铁电畴对压电性能的贡献，提高宏观压电性能；而且不会显著增加制备工艺的复杂度，可以直接应用在实际工业生产中。
Method for improving piezoelectric property of piezoelectric ceramic
The invention provides a method for improving the piezoelectric property of piezoelectric ceramics. The method comprises the following steps: placing the piezoelectric ceramics in an oxygen atmosphere for annealing treatment; the temperature of the annealing treatment is 550-750 DEG C, the air pressure is 0.5-1.0 atmospheric pressure, and the time is 0.1-3.0 hours. The piezoelectric ceramic is placed in the oxygen atmosphere for annealing treatment, and the annealing condition is strictly limited, so that oxygen vacancies in the piezoelectric ceramic can be reduced, pinning of the oxygen vacancies to a ferroelectric domain is reduced, the contribution of the ferroelectric domain to the piezoelectric property is improved, and the macroscopic piezoelectric property is improved; and moreover, the complexity of the preparation process is not obviously increased, and the method can be directly applied to actual industrial production.
本发明提供了一种提高压电陶瓷压电性能的方法，包括以下步骤：将压电陶瓷置于氧气气氛中进行退火处理；所述退火处理的温度为550℃～750℃、气压为0.5～1.0大气压、时间为0.1‑3.0小时。通过将压电陶瓷置于氧气气氛中进行退火处理并严格限制退火的条件，这样能够减少压电陶瓷中的氧空位，降低氧空位对铁电畴的钉扎，从而提高铁电畴对压电性能的贡献，提高宏观压电性能；而且不会显著增加制备工艺的复杂度，可以直接应用在实际工业生产中。
Method for improving piezoelectric property of piezoelectric ceramic
一种提高压电陶瓷压电性能的方法
LI ZHENG (author) / LU MINGHUI (author) / XIE HAISHENG (author) / WANG JUE (author) / LIU QIUYAN (author)
2024-10-25
Patent
Electronic Resource
Chinese
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