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Thin film thermocouple with high temperature measurement upper limit and preparation method thereof
A thin film thermocouple with high temperature measurement upper limit and a preparation method thereof belong to the field of thin film thermocouples, semiconductor metal oxide materials indium tin oxide and indium oxide are selected as sensitive materials of the thin film thermocouple, nanoscale particles of the two materials are made into ink, and the ink is deposited on the surface of a ceramic flat plate in an ink-jet printing mode. And then, a relatively stable conductive circuit is formed through primary sintering in a sintering furnace. And then nano-scale aluminum oxide and yttria-stabilized zirconia particles are selected and mixed to prepare protective layer ink, the protective layer ink is deposited on the surface of the sintered thin film thermocouple in an ink-jet printing mode to form a protective layer, and then high-temperature sintering is carried out again in a sintering furnace to form the stable thin film thermocouple with the protective layer. The temperature measurement upper limit of the thin film thermocouple is effectively improved; the thin film thermocouple prepared by the invention is simple in structure, convenient to prepare and good in adhesion, and can be recycled for multiple times. The thin film thermocouple prepared by the invention can be used for complex curved surface temperature measurement.
一种高测温上限薄膜热电偶及其制备方法，属于薄膜热电偶领域，本发明选用半导体金属氧化物材料氧化铟锡和氧化铟作为薄膜热电偶敏感材料，将两种材料的纳米级微粒制成墨水通过喷墨打印的方式沉积在陶瓷平板表面，之后在烧结炉中初步烧结形成较为稳定的导电线路。再选用纳米级氧化铝和氧化钇稳定氧化锆微粒掺混制备成保护层墨水，再通过喷墨打印的方式沉积在已烧结的薄膜热电偶表面形成保护层，然后在烧结炉中再次高温烧结形成稳定的带保护层的薄膜热电偶。本发明有效提高了薄膜热电偶测温上限；本发明制备的薄膜热电偶结构简单、制备便捷，粘接性良好，可多次循环使用。本发明制备的薄膜热电偶可用于复杂曲面测温。
Thin film thermocouple with high temperature measurement upper limit and preparation method thereof
A thin film thermocouple with high temperature measurement upper limit and a preparation method thereof belong to the field of thin film thermocouples, semiconductor metal oxide materials indium tin oxide and indium oxide are selected as sensitive materials of the thin film thermocouple, nanoscale particles of the two materials are made into ink, and the ink is deposited on the surface of a ceramic flat plate in an ink-jet printing mode. And then, a relatively stable conductive circuit is formed through primary sintering in a sintering furnace. And then nano-scale aluminum oxide and yttria-stabilized zirconia particles are selected and mixed to prepare protective layer ink, the protective layer ink is deposited on the surface of the sintered thin film thermocouple in an ink-jet printing mode to form a protective layer, and then high-temperature sintering is carried out again in a sintering furnace to form the stable thin film thermocouple with the protective layer. The temperature measurement upper limit of the thin film thermocouple is effectively improved; the thin film thermocouple prepared by the invention is simple in structure, convenient to prepare and good in adhesion, and can be recycled for multiple times. The thin film thermocouple prepared by the invention can be used for complex curved surface temperature measurement.
一种高测温上限薄膜热电偶及其制备方法，属于薄膜热电偶领域，本发明选用半导体金属氧化物材料氧化铟锡和氧化铟作为薄膜热电偶敏感材料，将两种材料的纳米级微粒制成墨水通过喷墨打印的方式沉积在陶瓷平板表面，之后在烧结炉中初步烧结形成较为稳定的导电线路。再选用纳米级氧化铝和氧化钇稳定氧化锆微粒掺混制备成保护层墨水，再通过喷墨打印的方式沉积在已烧结的薄膜热电偶表面形成保护层，然后在烧结炉中再次高温烧结形成稳定的带保护层的薄膜热电偶。本发明有效提高了薄膜热电偶测温上限；本发明制备的薄膜热电偶结构简单、制备便捷，粘接性良好，可多次循环使用。本发明制备的薄膜热电偶可用于复杂曲面测温。
Thin film thermocouple with high temperature measurement upper limit and preparation method thereof
一种高测温上限薄膜热电偶及其制备方法
QIU LU (author) / NI SHUZHI (author) / ZHU JIANQIN (author) / TAO ZHI (author)
2024-11-12
Patent
Electronic Resource
Chinese
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