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Wide-temperature-range stable sodium bismuth titanate-based ceramic capacitor dielectric material and preparation method thereof
The invention discloses a wide-temperature-range stable sodium bismuth titanate-based ceramic capacitor dielectric material and a preparation method thereof, and belongs to the technical field of piezoelectric ceramic materials. The wide-temperature-range stable sodium bismuth titanate-based ceramic capacitor dielectric material has a chemical general formula of (Na < 0.3 + x > Bi < 0.38-0.2 > x Sr < 0.28-0.7 x >) (Ti < 1-x > Nbx) O3, and x is greater than or equal to 0 and less than or equal to 0.1. The preparation method comprises the following steps: performing primary ball milling, pre-sintering at 900 DEG C, performing secondary ball milling, granulating, screening, performing dry pressing molding on fine powder under 8MPa, performing high-temperature glue discharging at 550 DEG C, and burying coarse powder in an air atmosphere and sintering at 1100-1130 DEG C to obtain the ceramic capacitor dielectric material. By adopting the sodium bismuth titanate-based ceramic capacitor dielectric material with the stable wide temperature range and the preparation method of the sodium bismuth titanate-based ceramic capacitor dielectric material, the problems of poor dielectric stability, low dielectric constant, high loss and harsh preparation process conditions of the existing sodium bismuth titanate-based piezoelectric ceramic can be solved.
本发明公开了一种宽温区稳定的钛酸铋钠基陶瓷电容器介质材料及其制备方法，属于压电陶瓷材料技术领域。宽温区稳定的钛酸铋钠基陶瓷电容器介质材料，化学通式为：(Na0.3+xBi0.38‑0.2xSr0.28‑0.7x)(Ti1‑xNbx)O3，0≤x≤0.1。制备方法包括一次球磨，900℃预烧，二次球磨，造粒、筛分，细粉8MPa干压成型，550℃高温排胶，粗粉掩埋空气气氛下1100℃‑1130℃烧结，得到陶瓷电容器介质材料。采用本发明所述的宽温区稳定的钛酸铋钠基陶瓷电容器介质材料及其制备方法，能够解决现有的钛酸铋钠基压电陶瓷介电稳定性差、低介电常数以及高损耗，制备工艺条件苛刻的问题。
Wide-temperature-range stable sodium bismuth titanate-based ceramic capacitor dielectric material and preparation method thereof
The invention discloses a wide-temperature-range stable sodium bismuth titanate-based ceramic capacitor dielectric material and a preparation method thereof, and belongs to the technical field of piezoelectric ceramic materials. The wide-temperature-range stable sodium bismuth titanate-based ceramic capacitor dielectric material has a chemical general formula of (Na < 0.3 + x > Bi < 0.38-0.2 > x Sr < 0.28-0.7 x >) (Ti < 1-x > Nbx) O3, and x is greater than or equal to 0 and less than or equal to 0.1. The preparation method comprises the following steps: performing primary ball milling, pre-sintering at 900 DEG C, performing secondary ball milling, granulating, screening, performing dry pressing molding on fine powder under 8MPa, performing high-temperature glue discharging at 550 DEG C, and burying coarse powder in an air atmosphere and sintering at 1100-1130 DEG C to obtain the ceramic capacitor dielectric material. By adopting the sodium bismuth titanate-based ceramic capacitor dielectric material with the stable wide temperature range and the preparation method of the sodium bismuth titanate-based ceramic capacitor dielectric material, the problems of poor dielectric stability, low dielectric constant, high loss and harsh preparation process conditions of the existing sodium bismuth titanate-based piezoelectric ceramic can be solved.
本发明公开了一种宽温区稳定的钛酸铋钠基陶瓷电容器介质材料及其制备方法，属于压电陶瓷材料技术领域。宽温区稳定的钛酸铋钠基陶瓷电容器介质材料，化学通式为：(Na0.3+xBi0.38‑0.2xSr0.28‑0.7x)(Ti1‑xNbx)O3，0≤x≤0.1。制备方法包括一次球磨，900℃预烧，二次球磨，造粒、筛分，细粉8MPa干压成型，550℃高温排胶，粗粉掩埋空气气氛下1100℃‑1130℃烧结，得到陶瓷电容器介质材料。采用本发明所述的宽温区稳定的钛酸铋钠基陶瓷电容器介质材料及其制备方法，能够解决现有的钛酸铋钠基压电陶瓷介电稳定性差、低介电常数以及高损耗，制备工艺条件苛刻的问题。
Wide-temperature-range stable sodium bismuth titanate-based ceramic capacitor dielectric material and preparation method thereof
一种宽温区稳定的钛酸铋钠基陶瓷电容器介质材料及其制备方法
WU WENJUAN (author) / CHEN MINHUI (author) / LUO LI (author) / LI JUNJIE (author) / WU BO (author) / CHEN QINYI (author) / LIU YANG (author) / XIAO QILONG (author) / YANG XUYI (author) / YANG QIANG (author)
2024-11-15
Patent
Electronic Resource
Chinese
| European Patent Office | 2024
| European Patent Office | 2024
| European Patent Office | 2021
| European Patent Office | 2021
| European Patent Office | 2021