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Composite material cladding tube grain directional growth control method, composite material cladding tube and preparation method
The invention discloses a grain directional growth control method of a composite material cladding tube, the composite material cladding tube and a preparation method, the cladding tube comprises fibers, an interface layer and a SiC matrix, and the SiC matrix is prepared by adopting a chemical vapor infiltration (CVI) process; in the process of preparing the SiC substrate by adopting a chemical vapor infiltration (CVI) process, the SiC substrate close to an interface layer is controlled to directionally grow to form columnar crystal SiC grains with single orientation; the directional growth control method comprises the following steps: by taking methyltrichlorosilane as a precursor gas, depositing a plurality of furnace sections when depositing a SiC substrate in a cladding tube prefabricated part with an interface layer, and sequentially increasing the content of methyltrichlorosilane in the deposition atmosphere of each furnace section from the first furnace section to the last furnace section in sequence. According to the method, oriented growth of SiC matrix grains close to an interface is achieved, columnar SiC grains with single orientation are obtained, and the mechanical property of the whole composite material cladding is improved.
本发明公开了一种复合材料包壳管晶粒定向生长控制方法、复合材料包壳管及制备方法，包壳管包括纤维、界面层与SiC基体，SiC基体采用化学气相渗透CVI工艺制备得到；在采用化学气相渗透CVI工艺制备SiC基体的过程中，控制靠近界面层的SiC基体内定向生长形成取向单一的柱状晶SiC晶粒；定向生长控制方法为：以三氯甲基硅烷为先驱气体，在带界面层的包壳管预制件中沉积SiC基体时沉积多个炉段，从第一个炉段至最后一个炉段按照次序依次提高每个炉段的沉积气氛中三氯甲基硅烷的含量。本发明实现了靠近界面处的SiC基体晶粒的定向生长，得到了具有单一取向的柱状晶SiC晶粒，提高了整个复合材料包壳的力学性能。
Composite material cladding tube grain directional growth control method, composite material cladding tube and preparation method
The invention discloses a grain directional growth control method of a composite material cladding tube, the composite material cladding tube and a preparation method, the cladding tube comprises fibers, an interface layer and a SiC matrix, and the SiC matrix is prepared by adopting a chemical vapor infiltration (CVI) process; in the process of preparing the SiC substrate by adopting a chemical vapor infiltration (CVI) process, the SiC substrate close to an interface layer is controlled to directionally grow to form columnar crystal SiC grains with single orientation; the directional growth control method comprises the following steps: by taking methyltrichlorosilane as a precursor gas, depositing a plurality of furnace sections when depositing a SiC substrate in a cladding tube prefabricated part with an interface layer, and sequentially increasing the content of methyltrichlorosilane in the deposition atmosphere of each furnace section from the first furnace section to the last furnace section in sequence. According to the method, oriented growth of SiC matrix grains close to an interface is achieved, columnar SiC grains with single orientation are obtained, and the mechanical property of the whole composite material cladding is improved.
本发明公开了一种复合材料包壳管晶粒定向生长控制方法、复合材料包壳管及制备方法，包壳管包括纤维、界面层与SiC基体，SiC基体采用化学气相渗透CVI工艺制备得到；在采用化学气相渗透CVI工艺制备SiC基体的过程中，控制靠近界面层的SiC基体内定向生长形成取向单一的柱状晶SiC晶粒；定向生长控制方法为：以三氯甲基硅烷为先驱气体，在带界面层的包壳管预制件中沉积SiC基体时沉积多个炉段，从第一个炉段至最后一个炉段按照次序依次提高每个炉段的沉积气氛中三氯甲基硅烷的含量。本发明实现了靠近界面处的SiC基体晶粒的定向生长，得到了具有单一取向的柱状晶SiC晶粒，提高了整个复合材料包壳的力学性能。
Composite material cladding tube grain directional growth control method, composite material cladding tube and preparation method
一种复合材料包壳管晶粒定向生长控制方法、复合材料包壳管及制备方法
ZHANG RUIQIAN (author) / LI MING (author) / LI GANG (author) / SHI HAOJIANG (author) / CHEN ZHAOKE (author) / CHEN YONG (author) / SUN CHAO (author) / LONG SHAOJUN (author) / YU CHONG (author)
2024-11-29
Patent
Electronic Resource
Chinese
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