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A platform for research: civil engineering, architecture and urbanism
Silicon carbide surface treatment method and application thereof
The invention provides a silicon carbide material surface treatment method and application, and the silicon carbide material surface treatment method comprises the following steps: placing a silicon carbide material with a to-be-treated surface in a vacuum cavity; performing water-oxygen oxidation treatment on the silicon carbide material to form an oxide layer; and carrying out acid pickling treatment and ultrasonic cleaning treatment on the oxide layer. The invention provides a silicon carbide material surface treatment method and application of the silicon carbide material surface treatment method in the field of wafer etching. According to the surface treatment method for the silicon carbide material, a stress damage layer generated on the surface of the silicon carbide material in the machining process can be eliminated, the surface flatness and smoothness of the silicon carbide material can be remarkably improved, the service life of the silicon carbide material is prolonged, the requirement for auxiliary chip production is met, and the production cost is reduced. And an environment for uniformly etching the wafer is provided, so that the wafer etching effect is effectively improved.
本发明提供了一种碳化硅材料表面处理方法及应用，本发明的碳化硅材料表面处理方法，包括如下步骤：将具有待处理表面的碳化硅材料放置在真空腔中；对所述碳化硅材料进行水氧氧化处理，形成氧化层；对所述氧化层进行酸洗处理和超声清洗处理。本发明提供了一种碳化硅材料表面处理方法以及所述碳化硅材料表面处理方法在晶圆刻蚀领域中的应用。本发明的碳化硅材料表面处理方法能够对碳化硅材料在加工过程中表面产生的应力损伤层进行消除，并且能够使所述碳化硅材料的表面平整度和光洁度得到显著提高，延长碳化硅材料的使用寿命，满足辅助芯片生产的要求，提供给晶圆被均匀刻蚀的环境，有效提升晶圆刻蚀的效果。
Silicon carbide surface treatment method and application thereof
The invention provides a silicon carbide material surface treatment method and application, and the silicon carbide material surface treatment method comprises the following steps: placing a silicon carbide material with a to-be-treated surface in a vacuum cavity; performing water-oxygen oxidation treatment on the silicon carbide material to form an oxide layer; and carrying out acid pickling treatment and ultrasonic cleaning treatment on the oxide layer. The invention provides a silicon carbide material surface treatment method and application of the silicon carbide material surface treatment method in the field of wafer etching. According to the surface treatment method for the silicon carbide material, a stress damage layer generated on the surface of the silicon carbide material in the machining process can be eliminated, the surface flatness and smoothness of the silicon carbide material can be remarkably improved, the service life of the silicon carbide material is prolonged, the requirement for auxiliary chip production is met, and the production cost is reduced. And an environment for uniformly etching the wafer is provided, so that the wafer etching effect is effectively improved.
本发明提供了一种碳化硅材料表面处理方法及应用，本发明的碳化硅材料表面处理方法，包括如下步骤：将具有待处理表面的碳化硅材料放置在真空腔中；对所述碳化硅材料进行水氧氧化处理，形成氧化层；对所述氧化层进行酸洗处理和超声清洗处理。本发明提供了一种碳化硅材料表面处理方法以及所述碳化硅材料表面处理方法在晶圆刻蚀领域中的应用。本发明的碳化硅材料表面处理方法能够对碳化硅材料在加工过程中表面产生的应力损伤层进行消除，并且能够使所述碳化硅材料的表面平整度和光洁度得到显著提高，延长碳化硅材料的使用寿命，满足辅助芯片生产的要求，提供给晶圆被均匀刻蚀的环境，有效提升晶圆刻蚀的效果。
Silicon carbide surface treatment method and application thereof
一种碳化硅表面处理方法及其应用
WEI JUBO (author) / YU SHENGJIE (author) / HUANG LINGYUN (author) / WAN QIANG (author) / LIAO JIAHAO (author) / CHAI PAN (author)
2024-12-13
Patent
Electronic Resource
Chinese
| European Patent Office | 2022
| European Patent Office | 2024