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High-purity silicon carbide ceramic material and preparation method thereof
The invention provides a high-purity silicon carbide ceramic material which is of a structure prepared by adding an additive into silicon carbide powder prepared from polycrystalline silicon powder and high-purity carbon powder and sintering, the silicon carbide powder comprises one or more of a 4H crystal form, a beta crystal form and an alpha crystal form, and the additive is polycarbosilane, polycarbosilazane, polycarbosiloxane or silicon carbide nanowhiskers; wherein the molar ratio of the silicon powder to the carbon powder is 1: (1-1.1); and the additive accounts for 0-1% of the total mass of the silicon carbide powder and the additive powder. Meanwhile, the invention further provides a preparation method of the material, impurities in the raw materials are effectively removed through a liquid phase reaction, the purity of the raw material powder is improved from the source, and the problem that the impurities of the silicon carbide powder are difficult to remove is solved.
本发明提供了一种高纯度碳化硅陶瓷材料，是多晶硅粉和高纯碳粉制备的碳化硅粉，加入添加剂后经过烧结制备的结构；碳化硅粉包括4H晶型、β晶型、α晶型一种或几种，添加剂为聚碳硅烷、聚碳硅氮烷、聚碳硅氧烷或碳化硅纳米晶须；其中硅粉与碳粉摩尔比例为，硅粉：高纯碳粉＝1：1～1.1；添加剂占碳化硅粉和添加剂粉料总质量的0～1％。同时，还提供上了材料的制备方法，该方法采用液相反应有效去除了原材料中的杂质，从源头上提高了原材料粉体的纯度，避免了碳化硅粉体除杂困难的问题。
High-purity silicon carbide ceramic material and preparation method thereof
The invention provides a high-purity silicon carbide ceramic material which is of a structure prepared by adding an additive into silicon carbide powder prepared from polycrystalline silicon powder and high-purity carbon powder and sintering, the silicon carbide powder comprises one or more of a 4H crystal form, a beta crystal form and an alpha crystal form, and the additive is polycarbosilane, polycarbosilazane, polycarbosiloxane or silicon carbide nanowhiskers; wherein the molar ratio of the silicon powder to the carbon powder is 1: (1-1.1); and the additive accounts for 0-1% of the total mass of the silicon carbide powder and the additive powder. Meanwhile, the invention further provides a preparation method of the material, impurities in the raw materials are effectively removed through a liquid phase reaction, the purity of the raw material powder is improved from the source, and the problem that the impurities of the silicon carbide powder are difficult to remove is solved.
本发明提供了一种高纯度碳化硅陶瓷材料，是多晶硅粉和高纯碳粉制备的碳化硅粉，加入添加剂后经过烧结制备的结构；碳化硅粉包括4H晶型、β晶型、α晶型一种或几种，添加剂为聚碳硅烷、聚碳硅氮烷、聚碳硅氧烷或碳化硅纳米晶须；其中硅粉与碳粉摩尔比例为，硅粉：高纯碳粉＝1：1～1.1；添加剂占碳化硅粉和添加剂粉料总质量的0～1％。同时，还提供上了材料的制备方法，该方法采用液相反应有效去除了原材料中的杂质，从源头上提高了原材料粉体的纯度，避免了碳化硅粉体除杂困难的问题。
High-purity silicon carbide ceramic material and preparation method thereof
一种高纯度碳化硅陶瓷材料及制备方法
YAN YONGJIE (author) / ZHANG XI (author) / ZHANG JUNXIONG (author) / TANG QIAN (author) / ZOU JIDONG (author) / JIANG WENJIE (author)
2025-01-21
Patent
Electronic Resource
Chinese
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