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METHOD OF MANUFACTURING A WAVELENGTH-CONVERTING SEMICONDUCTOR LIGHT-EMITTING DEVICE
Embodiments of the invention include a light emitting structure comprising a light emitting layer. A first luminescent material comprising a phosphor is disposed in a path of light emitted by the light emitting layer. A second luminescent material comprising a semiconductor is also disposed in a path of light emitted by the light emitting layer. The second luminescent material is configured to absorb light emitted by the light emitting layer and emit light of a different wavelength. In some embodiments, one of the first and second luminescent materials may be bonded to the semiconductor structure.
METHOD OF MANUFACTURING A WAVELENGTH-CONVERTING SEMICONDUCTOR LIGHT-EMITTING DEVICE
Embodiments of the invention include a light emitting structure comprising a light emitting layer. A first luminescent material comprising a phosphor is disposed in a path of light emitted by the light emitting layer. A second luminescent material comprising a semiconductor is also disposed in a path of light emitted by the light emitting layer. The second luminescent material is configured to absorb light emitted by the light emitting layer and emit light of a different wavelength. In some embodiments, one of the first and second luminescent materials may be bonded to the semiconductor structure.
METHOD OF MANUFACTURING A WAVELENGTH-CONVERTING SEMICONDUCTOR LIGHT-EMITTING DEVICE
VERFAHREN ZUR HERSTELLUNG EINES LICHTEMITTIERENDEN WELLENLÄNGENGEWANDELTEN HALBLEITERBAUELEMENTS
PROCÉDÉ DE FABRICATION D'UN DISPOSITIF SEMICONDUCTEUR ÉMETTEUR DE LUMIÈRE ET CONVERTISSEUR DE LONGUEUR D'ONDE
KRAMES MICHAEL R (author) / MUELLER GERD O (author)
2018-08-15
Patent
Electronic Resource
English
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