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GRAPHITE CRUCIBLE FOR SILICON CRYSTAL PRODUCTION AND METHOD OF INGOT REMOVAL
A graphite crucible for processing silicon includes a bottom wall including a bottom wall interior facing surface. A plurality of side walls extend upwardly from the bottom wall, each side wall including a side wall interior facing surface. A contact point is provided on the side wall to prevent upward movement of the crucible during ingot removal. The side walls have a coefficient of thermal expansion perpendicular to the solidification direction that is less than 95% of the coefficient of thermal expansion of the silicon processed therein. Also, the side walls and the bottom wall have a thru-plane thermal conductivity from about 90 to about 160 W/m·K at room temperature.
GRAPHITE CRUCIBLE FOR SILICON CRYSTAL PRODUCTION AND METHOD OF INGOT REMOVAL
A graphite crucible for processing silicon includes a bottom wall including a bottom wall interior facing surface. A plurality of side walls extend upwardly from the bottom wall, each side wall including a side wall interior facing surface. A contact point is provided on the side wall to prevent upward movement of the crucible during ingot removal. The side walls have a coefficient of thermal expansion perpendicular to the solidification direction that is less than 95% of the coefficient of thermal expansion of the silicon processed therein. Also, the side walls and the bottom wall have a thru-plane thermal conductivity from about 90 to about 160 W/m·K at room temperature.
GRAPHITE CRUCIBLE FOR SILICON CRYSTAL PRODUCTION AND METHOD OF INGOT REMOVAL
GRAPHITSCHMELZTIEGEL ZUR HERSTELLUNG VON SILICIUMKRISTALLEN UND VERFAHREN ZUR ENTNAHME VON KRISTALLBLÖCKEN
CREUSET DE GRAPHITE POUR LA PRODUCTION DE CRISTAUX DE SILICIUM ET PROCÉDÉ DE RETRAIT DE LINGOT
FRANCIS ANDREW JUSTIN (author) / REYNOLDS ROBERT A III (author) / ELLOITT RYAN CHRISTOPHER (author) / SHIVES GARY DALE (author) / SUBRAMANIAN PRASHANTH (author) / KRUSS OLIVER (author)
2015-12-16
Patent
Electronic Resource
English
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