A platform for research: civil engineering, architecture and urbanism
FERTIGUNGSANLAGE ZUR HERSTELLUNG VON INTEGRIERTEN SCHALTKREISEN AUS HALBLEITER-WAFERN SOWIE WAFFELELEMENT FÜR EINE FERTIGUNGSANLAGE
A processing facility for manufacturing integrated circuits on semiconductor wafers is provided with at least one radiation generator that generates an EUV (extreme ultraviolet) radiation that is supplied to at least one lithography machine, housed in a factory building, for exposure of the semiconductor wafers. The radiation generator is housed in a building or a building section separate from the factory building. At least one beam guide extends from the building or the building section to the factory building, wherein the EUV radiation is supplied from the building or the building section through the at least one beam guide to the factory building. At least one supply line branches off at an obtuse angle from the at least one beam guide inside the factory building, wherein at least a portion of the EUV radiation is supplied through the at least one supply line to the lithography machine.
FERTIGUNGSANLAGE ZUR HERSTELLUNG VON INTEGRIERTEN SCHALTKREISEN AUS HALBLEITER-WAFERN SOWIE WAFFELELEMENT FÜR EINE FERTIGUNGSANLAGE
A processing facility for manufacturing integrated circuits on semiconductor wafers is provided with at least one radiation generator that generates an EUV (extreme ultraviolet) radiation that is supplied to at least one lithography machine, housed in a factory building, for exposure of the semiconductor wafers. The radiation generator is housed in a building or a building section separate from the factory building. At least one beam guide extends from the building or the building section to the factory building, wherein the EUV radiation is supplied from the building or the building section through the at least one beam guide to the factory building. At least one supply line branches off at an obtuse angle from the at least one beam guide inside the factory building, wherein at least a portion of the EUV radiation is supplied through the at least one supply line to the lithography machine.
FERTIGUNGSANLAGE ZUR HERSTELLUNG VON INTEGRIERTEN SCHALTKREISEN AUS HALBLEITER-WAFERN SOWIE WAFFELELEMENT FÜR EINE FERTIGUNGSANLAGE
PRODUCTION PLANT FOR PRODUCING INTEGRATED CIRCUITS FROM SEMICONDUCTOR WAFERS AND WAFFLE ELEMENT FOR A PRODUCTION PLANT
INSTALLATION DE FABRICATION DE CIRCUITS INTÉGRÉS DE COMMUTATION À PARTIR DE WAFERS SEMI-CONDUCTEURS ET ÉLÉMENT ALVÉOLÉ POUR UNE INSTALLATION DE FABRICATION
SCHNEIDER HARTMUT (author) / EBERLE FREYJA (author) / KÖHLER STEFFEN (author) / CSÁTARY PETER (author) / BLASCHITZ HERBERT (author)
2019-10-09
Patent
Electronic Resource
German
IPC:
G03F
Fotomechanische Herstellung strukturierter oder gemusterter Oberflächen, z.B. zum Drucken, zum Herstellen von Halbleiterbauelementen
,
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
/
E04B
Allgemeine Baukonstruktionen
,
GENERAL BUILDING CONSTRUCTIONS
/
E04F
FINISHING WORK ON BUILDINGS, e.g. STAIRS, FLOORS
,
Ausbau von Bauwerken, z.B. Treppen, Fußböden
/
E04H
Gebäude oder ähnliche Bauwerke für besondere Zwecke
,
BUILDINGS OR LIKE STRUCTURES FOR PARTICULAR PURPOSES
/
F24F
Klimatisierung
,
AIR-CONDITIONING
/
H01L
Halbleiterbauelemente
,
SEMICONDUCTOR DEVICES
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