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METHOD FOR OBTAINING LEAD-FREE PIEZOELECTRIC MATERIAL, AND CORRESPONDING LEAD-FREE PIEZOELECTRIC MATERIAL
The present disclosure relates to a method for obtaining lead-free piezoelectric materials, including:Step S100, adjusting the T/O phase boundary of a first lead-free piezoelectric material:for the first lead-free piezoelectric material, adjusting the T/O phase boundary between the tetragonal phase T and the orthorhombic phase O to be near the room temperature by doping;Step S200, further adjusting the C/T phase boundary and the O/R phase boundary:further adjusting the C/T phase boundary between the cubic paraelectric phase C and the tetragonal phase T, and the O/R phase boundary between the orthorhombic phase O and the rhombohedral phase R by doping, so as to enable the C/T phase boundary and the O/R phase boundary to approach the T/O phase boundary; andStep S300, obtaining second lead-free piezoelectric materials:obtaining multiple second lead-free piezoelectric materials with different piezoelectric constants d33 and different Curie temperatures Tc in the process that the C/T phase boundary and the O/R phase boundary approach the T/O phase boundary. The present disclosure further relates to corresponding lead-free piezoelectric materials.The technical solution in the present disclosure is expected to replace the lead-based piezoelectric material made of lead zirconate titanate (PZT) under various application scenarios, and the method is economical in process and is energy-saving and environmentally friendly.
METHOD FOR OBTAINING LEAD-FREE PIEZOELECTRIC MATERIAL, AND CORRESPONDING LEAD-FREE PIEZOELECTRIC MATERIAL
The present disclosure relates to a method for obtaining lead-free piezoelectric materials, including:Step S100, adjusting the T/O phase boundary of a first lead-free piezoelectric material:for the first lead-free piezoelectric material, adjusting the T/O phase boundary between the tetragonal phase T and the orthorhombic phase O to be near the room temperature by doping;Step S200, further adjusting the C/T phase boundary and the O/R phase boundary:further adjusting the C/T phase boundary between the cubic paraelectric phase C and the tetragonal phase T, and the O/R phase boundary between the orthorhombic phase O and the rhombohedral phase R by doping, so as to enable the C/T phase boundary and the O/R phase boundary to approach the T/O phase boundary; andStep S300, obtaining second lead-free piezoelectric materials:obtaining multiple second lead-free piezoelectric materials with different piezoelectric constants d33 and different Curie temperatures Tc in the process that the C/T phase boundary and the O/R phase boundary approach the T/O phase boundary. The present disclosure further relates to corresponding lead-free piezoelectric materials.The technical solution in the present disclosure is expected to replace the lead-based piezoelectric material made of lead zirconate titanate (PZT) under various application scenarios, and the method is economical in process and is energy-saving and environmentally friendly.
METHOD FOR OBTAINING LEAD-FREE PIEZOELECTRIC MATERIAL, AND CORRESPONDING LEAD-FREE PIEZOELECTRIC MATERIAL
VERFAHREN ZUR HERSTELLUNG EINES BLEIFREIEN PIEZOELEKTRISCHEN MATERIALS UND ENTSPRECHENDES BLEIFREIES PIEZOELEKTRISCHES MATERIAL
PROCÉDÉ D'OBTENTION D'UN MATÉRIAU PIÉZOÉLECTRIQUE SANS PLOMB ET MATÉRIAU PIÉZOÉLECTRIQUE SANS PLOMB CORRESPONDANT
REN XIAOBING (author) / REN SHUAI (author) / HAO YANSHUANG (author) / FANG MINXIA (author)
2021-06-16
Patent
Electronic Resource
English
| European Patent Office | 2022