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PREPARATION METHOD FOR COPPER PLATE-COVERED SILICON NITRIDE CERAMIC SUBSTRATE
The present disclosure relates to a preparation method for a copper plate-covered silicon nitride ceramic substrate. The structure of the copper plate-covered silicon nitride ceramic substrate includes a silicon nitride ceramic substrate, copper sheets disposed on the upper and lower sides of the silicon nitride ceramic substrate and soldering layers disposed between the copper sheets and the silicon nitride ceramic substrate; the composition of the silicon nitride ceramic substrate comprises a silicon nitride phase and a grain boundary phase; the content of the silicon nitride phase is more than or equal to 95 wt%; the grain boundary phase is a mixture containing at least three elements (Y, Mg and O); the content of the grain boundary phase is less than or equal to 5 wt%, and the content of a crystalline phase in the grain boundary phase is more than or equal to 40 vol%; the sintering aids for the preparation of the silicon nitride ceramic substrate are Y2O3 and MgO, the molar ratio of Y2O3 to MgO is (1.0 to 1.4) : (2.5 to 2.9), and the two-step sintering process comprises: in a nitrogen atmosphere with a atmospheric pressure of 0.5 MPa to 10 MPa, performing low-temperature heat treatment at 1600 °C to 1800 °C and high-temperature heat treatment performed at 1800 °C to 2000 °C in sequence; and the thickness of the silicon nitride ceramic substrate is 0.2 mm to 2.0 mm.
PREPARATION METHOD FOR COPPER PLATE-COVERED SILICON NITRIDE CERAMIC SUBSTRATE
The present disclosure relates to a preparation method for a copper plate-covered silicon nitride ceramic substrate. The structure of the copper plate-covered silicon nitride ceramic substrate includes a silicon nitride ceramic substrate, copper sheets disposed on the upper and lower sides of the silicon nitride ceramic substrate and soldering layers disposed between the copper sheets and the silicon nitride ceramic substrate; the composition of the silicon nitride ceramic substrate comprises a silicon nitride phase and a grain boundary phase; the content of the silicon nitride phase is more than or equal to 95 wt%; the grain boundary phase is a mixture containing at least three elements (Y, Mg and O); the content of the grain boundary phase is less than or equal to 5 wt%, and the content of a crystalline phase in the grain boundary phase is more than or equal to 40 vol%; the sintering aids for the preparation of the silicon nitride ceramic substrate are Y2O3 and MgO, the molar ratio of Y2O3 to MgO is (1.0 to 1.4) : (2.5 to 2.9), and the two-step sintering process comprises: in a nitrogen atmosphere with a atmospheric pressure of 0.5 MPa to 10 MPa, performing low-temperature heat treatment at 1600 °C to 1800 °C and high-temperature heat treatment performed at 1800 °C to 2000 °C in sequence; and the thickness of the silicon nitride ceramic substrate is 0.2 mm to 2.0 mm.
PREPARATION METHOD FOR COPPER PLATE-COVERED SILICON NITRIDE CERAMIC SUBSTRATE
HERSTELLUNGSVERFAHREN FÜR MIT EINER KUPFERPLATTE ÜBERZOGENES SILICIUMNITRIDKERAMIKSUBSTRAT
PROCÉDÉ DE PRÉPARATION DE SUBSTRAT EN CÉRAMIQUE À BASE DE NITRURE DE SILICIUM RECOUVERT DE PLAQUES DE CUIVRE
LIU XUEJIAN (author) / ZHANG HUI (author) / YAO XIUMIN (author) / LIU YAN (author) / JIANG JINDI (author) / HUANG ZHENGREN (author) / CHEN ZHONGMING (author)
2025-02-05
Patent
Electronic Resource
English
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