A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
OXIDE SINTERED BODY, OXIDE SEMICONDUCTOR FILM AND THIN FILM TRANSISTOR
PROBLEM TO BE SOLVED: To provide an IGZO oxide sintered body capable of suppressing fluctuation (dispersion) of a carrier concentration in a thin film formed by sputtering, and suppressing fluctuation (dispersion) of a threshold voltage Vof TFT using the thin film.SOLUTION: An oxide sintered body has indium (In), gallium (Ga) and zinc (Zn). The oxide sintered body contains 200-1,500 wt.ppm zirconium (Zr), and has a bulk resistance of 1-40 m-Ω-cm. An oxide semiconductor film has a relative density of 95% or more.
【課題】スパッタリングによって形成した薄膜中のキャリア濃度の変動（ばらつき）を抑制し、該薄膜を使用したＴＦＴの閾値電圧Ｖｔｈの変動（ばらつき）を抑制することが可能なＩＧＺＯ酸化物焼結体を提供する。【解決手段】インジウム（Ｉｎ）、ガリウム（Ｇａ）及び亜鉛（Ｚｎ）を有する酸化物焼結体であって、ジルコニウム（Ｚｒ）を２００〜１５００ｗｔｐｐｍ含有し、バルク抵抗が１〜４０ｍΩｃｍである酸化物焼結体で、相対密度が９５％以上である酸化物半導体膜。【選択図】図１
OXIDE SINTERED BODY, OXIDE SEMICONDUCTOR FILM AND THIN FILM TRANSISTOR
PROBLEM TO BE SOLVED: To provide an IGZO oxide sintered body capable of suppressing fluctuation (dispersion) of a carrier concentration in a thin film formed by sputtering, and suppressing fluctuation (dispersion) of a threshold voltage Vof TFT using the thin film.SOLUTION: An oxide sintered body has indium (In), gallium (Ga) and zinc (Zn). The oxide sintered body contains 200-1,500 wt.ppm zirconium (Zr), and has a bulk resistance of 1-40 m-Ω-cm. An oxide semiconductor film has a relative density of 95% or more.
【課題】スパッタリングによって形成した薄膜中のキャリア濃度の変動（ばらつき）を抑制し、該薄膜を使用したＴＦＴの閾値電圧Ｖｔｈの変動（ばらつき）を抑制することが可能なＩＧＺＯ酸化物焼結体を提供する。【解決手段】インジウム（Ｉｎ）、ガリウム（Ｇａ）及び亜鉛（Ｚｎ）を有する酸化物焼結体であって、ジルコニウム（Ｚｒ）を２００〜１５００ｗｔｐｐｍ含有し、バルク抵抗が１〜４０ｍΩｃｍである酸化物焼結体で、相対密度が９５％以上である酸化物半導体膜。【選択図】図１
OXIDE SINTERED BODY, OXIDE SEMICONDUCTOR FILM AND THIN FILM TRANSISTOR
酸化物焼結体、酸化物半導体膜及び薄膜トランジスタ
TSUNODA KOJI (author) / KOSHO TAKASHI (author)
2015-08-03
Patent
Electronic Resource
Japanese
AMORPHOUS OXIDE SEMICONDUCTOR FILM, OXIDE SINTERED BODY, AND THIN FILM TRANSISTOR
| European Patent Office | 2018
OXIDE SINTERED BODY, SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND THIN FILM TRANSISTOR
| European Patent Office | 2019
OXIDE SEMICONDUCTOR FILM, THIN FILM TRANSISTOR, OXIDE SINTERED BODY, AND SPUTTERING TARGET
| European Patent Office | 2019
OXIDE SINTERED BODY, SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND THIN-FILM TRANSISTOR
| European Patent Office | 2019
OXIDE SINTERED BODY, SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND THIN-FILM TRANSISTOR
| European Patent Office | 2019