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PROBLEM TO BE SOLVED: To provide a method for joining silicon carbide ceramics of joining two silicon carbide ceramics without leaving a residue between two silicon carbide ceramics and also without requiring a large scale device.SOLUTION: The method for joining silicon carbide ceramics includes a process A where the two silicon carbide ceramics are subjected to thermal compression bond under the temperature conditions of 1,000°C or higher and the facial pressure conditions of 30 kg/cmor higher. The silicon composing at least either silicon carbide ceramic in the two silicon carbide ceramics has mass% higher than 70%.
【課題】２つの炭化ケイ素セラミックの間に残存物を残さずに、かつ、大掛かりな装置を必要とせずに、２つの炭化ケイ素セラミックを接合する炭化ケイ素セラミックの接合方法を提供することができる。【解決手段】炭化ケイ素セラミックの接合方法は、１０００℃以上の温度条件及び３０ｋｇ／ｃｍ２以上の面圧条件下において、前記２つの炭化ケイ素セラミックの熱圧着を行う工程Ａを含む。前記２つの炭化ケイ素セラミックのうち、少なくとも一方の炭化ケイ素セラミックを構成するケイ素は、７０％よりも大きい質量％を有する。【選択図】図１
PROBLEM TO BE SOLVED: To provide a method for joining silicon carbide ceramics of joining two silicon carbide ceramics without leaving a residue between two silicon carbide ceramics and also without requiring a large scale device.SOLUTION: The method for joining silicon carbide ceramics includes a process A where the two silicon carbide ceramics are subjected to thermal compression bond under the temperature conditions of 1,000°C or higher and the facial pressure conditions of 30 kg/cmor higher. The silicon composing at least either silicon carbide ceramic in the two silicon carbide ceramics has mass% higher than 70%.
【課題】２つの炭化ケイ素セラミックの間に残存物を残さずに、かつ、大掛かりな装置を必要とせずに、２つの炭化ケイ素セラミックを接合する炭化ケイ素セラミックの接合方法を提供することができる。【解決手段】炭化ケイ素セラミックの接合方法は、１０００℃以上の温度条件及び３０ｋｇ／ｃｍ２以上の面圧条件下において、前記２つの炭化ケイ素セラミックの熱圧着を行う工程Ａを含む。前記２つの炭化ケイ素セラミックのうち、少なくとも一方の炭化ケイ素セラミックを構成するケイ素は、７０％よりも大きい質量％を有する。【選択図】図１
METHOD FOR JOINING SILICON CARBIDE CERAMICS
炭化ケイ素セラミックの接合方法
ODAKA FUMIO (author)
2015-12-14
Patent
Electronic Resource
Japanese
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