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    DRIVING METHOD OF PIEZO ELECTRIC ELEMENT, PIEZO ELECTRIC ELEMENT, AND PIEZO ELECTRIC ELEMENT APPLIED DEVICE

    New search for: YOKOYAMA NAOTO

    PROBLEM TO BE SOLVED: To provide a driving method of a piezo electric element capable of suppressing degradation of the piezo electric element caused by segregation of oxygen deficiency of a piezo electric layer and suitably driving the piezo electric element for a long term.SOLUTION: The driving method of a piezo electric element including: a first electrode 60; a piezo-electric layer 70 formed on the first electrode 60 and composed of a complex oxide of an ABOtype perovskite structure; and a second electrode 80 formed on the piezo-electric layer 70 includes: driving the piezo electric element for a predetermined number of times with a predetermined driving waveform; and driving the piezo electric element by reversing the polarity of the driving waveform.SELECTED DRAWING: Figure 7

    【課題】圧電体層の酸素欠損の偏析によって引き起こされる圧電素子の劣化を抑制でき、長期に亘って圧電素子を好適に駆動できる圧電素子の駆動方法を提供する。【解決手段】第１電極６０と、第１電極６０上に形成され、ＡＢＯ３型ペロブスカイト構造の複合酸化物からなる圧電体層７０と、圧電体層７０上に形成される第２電極８０と、を具備する圧電素子の駆動方法であって、所定の駆動波形で所定回数圧電素子を駆動した後、駆動波形の極性を反転させて該圧電素子を駆動する。【選択図】図７

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    DRIVING METHOD OF PIEZO ELECTRIC ELEMENT, PIEZO ELECTRIC ELEMENT, AND PIEZO ELECTRIC ELEMENT APPLIED DEVICE

    New search for: YOKOYAMA NAOTO

    PROBLEM TO BE SOLVED: To provide a driving method of a piezo electric element capable of suppressing degradation of the piezo electric element caused by segregation of oxygen deficiency of a piezo electric layer and suitably driving the piezo electric element for a long term.SOLUTION: The driving method of a piezo electric element including: a first electrode 60; a piezo-electric layer 70 formed on the first electrode 60 and composed of a complex oxide of an ABOtype perovskite structure; and a second electrode 80 formed on the piezo-electric layer 70 includes: driving the piezo electric element for a predetermined number of times with a predetermined driving waveform; and driving the piezo electric element by reversing the polarity of the driving waveform.SELECTED DRAWING: Figure 7

    【課題】圧電体層の酸素欠損の偏析によって引き起こされる圧電素子の劣化を抑制でき、長期に亘って圧電素子を好適に駆動できる圧電素子の駆動方法を提供する。【解決手段】第１電極６０と、第１電極６０上に形成され、ＡＢＯ３型ペロブスカイト構造の複合酸化物からなる圧電体層７０と、圧電体層７０上に形成される第２電極８０と、を具備する圧電素子の駆動方法であって、所定の駆動波形で所定回数圧電素子を駆動した後、駆動波形の極性を反転させて該圧電素子を駆動する。【選択図】図７

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    DRIVING METHOD OF PIEZO ELECTRIC ELEMENT, PIEZO ELECTRIC ELEMENT, AND PIEZO ELECTRIC ELEMENT APPLIED DEVICE

    New search for: YOKOYAMA NAOTO

    PROBLEM TO BE SOLVED: To provide a driving method of a piezo electric element capable of suppressing degradation of the piezo electric element caused by segregation of oxygen deficiency of a piezo electric layer and suitably driving the piezo electric element for a long term.SOLUTION: The driving method of a piezo electric element including: a first electrode 60; a piezo-electric layer 70 formed on the first electrode 60 and composed of a complex oxide of an ABOtype perovskite structure; and a second electrode 80 formed on the piezo-electric layer 70 includes: driving the piezo electric element for a predetermined number of times with a predetermined driving waveform; and driving the piezo electric element by reversing the polarity of the driving waveform.SELECTED DRAWING: Figure 7

    【課題】圧電体層の酸素欠損の偏析によって引き起こされる圧電素子の劣化を抑制でき、長期に亘って圧電素子を好適に駆動できる圧電素子の駆動方法を提供する。【解決手段】第１電極６０と、第１電極６０上に形成され、ＡＢＯ３型ペロブスカイト構造の複合酸化物からなる圧電体層７０と、圧電体層７０上に形成される第２電極８０と、を具備する圧電素子の駆動方法であって、所定の駆動波形で所定回数圧電素子を駆動した後、駆動波形の極性を反転させて該圧電素子を駆動する。【選択図】図７

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    Title:

    DRIVING METHOD OF PIEZO ELECTRIC ELEMENT, PIEZO ELECTRIC ELEMENT, AND PIEZO ELECTRIC ELEMENT APPLIED DEVICE

    Additional title:

    圧電素子の駆動方法及び圧電素子並びに圧電素子応用デバイス

    Contributors:

    YOKOYAMA NAOTO (author)

    Publication date:

    2016-08-08

    Type of media:

    Patent

    Type of material:

    Electronic Resource

    Language:

    Japanese

    Classification:

    IPC:  H02N Elektrische Maschinen, soweit nicht anderweitig vorgesehen , ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR / B41J TYPEWRITERS , Schreibmaschinen / C04B Kalk , LIME / H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES

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