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NITRIDE THERMOELECTRIC CONVERSION MATERIAL, MANUFACTURING METHOD THEREFOR AND THERMOELECTRIC CONVERSION ELEMENT
PROBLEM TO BE SOLVED: To provide: a nitride thermoelectric conversion material which does not use harmful elements, exhibits good performance, and can form a thin layer such as a film; a manufacturing method therefor; and a thermoelectric conversion element.SOLUTION: The nitride thermoelectric conversion material comprises a metal nitride represented by general formula (CrM)N(where M represents at least one of Ti, V, Mn, Fe, Co, Ni, Cu, Zr, Nb, Mo, Hf, Ta, W, Si, Al, B and Y; 0≤x<1.0; and 0.40≤y<0.54), and has a NaCl-type crystal structure and p- or n-type thermoelectric properties. The method for manufacturing this nitride thermoelectric conversion material has a film forming step for forming a film by reactive sputtering in a nitrogen-containing atmosphere using a Cr sputtering target or Cr-M alloy sputtering target (where M represents at least one of Ti, V, Mn, Fe, Co, Ni, Cu, Zr, Nb, Mo, Hf, Ta, W, Si, Al, B and Y).SELECTED DRAWING: Figure 1
【課題】 有害元素を用いず、良好な性能を有すると共にフィルム等への薄膜形成が可能な窒化物熱電変換材料及びその製造方法並びに熱電変換素子を提供すること。【解決手段】 一般式：（Ｃｒ１−ｘＭｘ）１−ｙＮｙ（但し、ＭはＴｉ，Ｖ，Ｍｎ，Ｆｅ，Ｃｏ，Ｎｉ，Ｃｕ，Ｚｒ，Ｎｂ，Ｍｏ，Ｈｆ，Ｔａ，Ｗ，Ｓｉ，Ａｌ，Ｂ及びＹのうち少なくとも１種を示す。０≦ｘ＜１．０、０．４０≦ｙ＜０．５４）で示される金属窒化物からなり、その結晶構造が、ＮａＣｌ型であり、ｐ型又はｎ型の熱電特性を有する。この窒化物熱電変換材料の製造方法は、Ｃｒスパッタリングターゲット又はＣｒ−Ｍ合金スパッタリングターゲット（但し、ＭはＴｉ，Ｖ，Ｍｎ，Ｆｅ，Ｃｏ，Ｎｉ，Ｃｕ，Ｚｒ，Ｎｂ，Ｍｏ，Ｈｆ，Ｔａ，Ｗ，Ｓｉ，Ａｌ，Ｂ及びＹのうち少なくとも１種を示す。）を用いて窒素含有雰囲気中で反応性スパッタを行って成膜する成膜工程を有している。【選択図】図１
NITRIDE THERMOELECTRIC CONVERSION MATERIAL, MANUFACTURING METHOD THEREFOR AND THERMOELECTRIC CONVERSION ELEMENT
PROBLEM TO BE SOLVED: To provide: a nitride thermoelectric conversion material which does not use harmful elements, exhibits good performance, and can form a thin layer such as a film; a manufacturing method therefor; and a thermoelectric conversion element.SOLUTION: The nitride thermoelectric conversion material comprises a metal nitride represented by general formula (CrM)N(where M represents at least one of Ti, V, Mn, Fe, Co, Ni, Cu, Zr, Nb, Mo, Hf, Ta, W, Si, Al, B and Y; 0≤x<1.0; and 0.40≤y<0.54), and has a NaCl-type crystal structure and p- or n-type thermoelectric properties. The method for manufacturing this nitride thermoelectric conversion material has a film forming step for forming a film by reactive sputtering in a nitrogen-containing atmosphere using a Cr sputtering target or Cr-M alloy sputtering target (where M represents at least one of Ti, V, Mn, Fe, Co, Ni, Cu, Zr, Nb, Mo, Hf, Ta, W, Si, Al, B and Y).SELECTED DRAWING: Figure 1
【課題】 有害元素を用いず、良好な性能を有すると共にフィルム等への薄膜形成が可能な窒化物熱電変換材料及びその製造方法並びに熱電変換素子を提供すること。【解決手段】 一般式：（Ｃｒ１−ｘＭｘ）１−ｙＮｙ（但し、ＭはＴｉ，Ｖ，Ｍｎ，Ｆｅ，Ｃｏ，Ｎｉ，Ｃｕ，Ｚｒ，Ｎｂ，Ｍｏ，Ｈｆ，Ｔａ，Ｗ，Ｓｉ，Ａｌ，Ｂ及びＹのうち少なくとも１種を示す。０≦ｘ＜１．０、０．４０≦ｙ＜０．５４）で示される金属窒化物からなり、その結晶構造が、ＮａＣｌ型であり、ｐ型又はｎ型の熱電特性を有する。この窒化物熱電変換材料の製造方法は、Ｃｒスパッタリングターゲット又はＣｒ−Ｍ合金スパッタリングターゲット（但し、ＭはＴｉ，Ｖ，Ｍｎ，Ｆｅ，Ｃｏ，Ｎｉ，Ｃｕ，Ｚｒ，Ｎｂ，Ｍｏ，Ｈｆ，Ｔａ，Ｗ，Ｓｉ，Ａｌ，Ｂ及びＹのうち少なくとも１種を示す。）を用いて窒素含有雰囲気中で反応性スパッタを行って成膜する成膜工程を有している。【選択図】図１
NITRIDE THERMOELECTRIC CONVERSION MATERIAL, MANUFACTURING METHOD THEREFOR AND THERMOELECTRIC CONVERSION ELEMENT
窒化物熱電変換材料及びその製造方法並びに熱電変換素子
FUJITA TOSHIAKI (author) / NAGATOMO KENSHO (author)
2016-10-20
Patent
Electronic Resource
Japanese
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