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THERMOELECTRIC CONVERSION MATERIAL, THERMOELECTRIC ELEMENT INCLUDING THE SAME, AND MANUFACTURING METHOD OF THERMOELECTRIC CONVERSION MATERIAL
PROBLEM TO BE SOLVED: To provide a thermoelectric conversion material with high carrier concentration.SOLUTION: The thermoelectric conversion material capable of achieving high carrier concentration by doping Sb in magnesium silicide includes Mg, Si, Sb, and Al, and is formed by way of milling processing and discharge plasma sintering after the milling processing. The discharge plasma sintering is performed at a temperature of 600 to 1000°C. Time for holding the high temperature state is set at 0 to 10 minutes.SELECTED DRAWING: Figure 2
【課題】高いキャリア濃度の熱電変換材料を提供する。【解決手段】マグネシウムシリサイドにＳｂをドーピングして高いキャリア濃度を実現できる熱電変換材料であって、Ｍｇ、Ｓｉ、Ｓｂ、及びＡｌを含有し、ミリング処理及びミリング処理後の放電プラズマ焼結を経て形成する。放電プラズマ焼結を６００〜１０００℃の温度で行い、高温状態に保持する時間を０〜１０分とする。【選択図】図２
THERMOELECTRIC CONVERSION MATERIAL, THERMOELECTRIC ELEMENT INCLUDING THE SAME, AND MANUFACTURING METHOD OF THERMOELECTRIC CONVERSION MATERIAL
PROBLEM TO BE SOLVED: To provide a thermoelectric conversion material with high carrier concentration.SOLUTION: The thermoelectric conversion material capable of achieving high carrier concentration by doping Sb in magnesium silicide includes Mg, Si, Sb, and Al, and is formed by way of milling processing and discharge plasma sintering after the milling processing. The discharge plasma sintering is performed at a temperature of 600 to 1000°C. Time for holding the high temperature state is set at 0 to 10 minutes.SELECTED DRAWING: Figure 2
【課題】高いキャリア濃度の熱電変換材料を提供する。【解決手段】マグネシウムシリサイドにＳｂをドーピングして高いキャリア濃度を実現できる熱電変換材料であって、Ｍｇ、Ｓｉ、Ｓｂ、及びＡｌを含有し、ミリング処理及びミリング処理後の放電プラズマ焼結を経て形成する。放電プラズマ焼結を６００〜１０００℃の温度で行い、高温状態に保持する時間を０〜１０分とする。【選択図】図２
THERMOELECTRIC CONVERSION MATERIAL, THERMOELECTRIC ELEMENT INCLUDING THE SAME, AND MANUFACTURING METHOD OF THERMOELECTRIC CONVERSION MATERIAL
熱電変換材料、それを用いた熱電素子、及び熱電変換材料の製造方法
KATO DAISUKE (author)
2016-12-08
Patent
Electronic Resource
Japanese
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