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A platform for research: civil engineering, architecture and urbanism
SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE CIRCUIT BOARD USING THE SAME
PROBLEM TO BE SOLVED: To provide a silicon nitride substrate excellent in insulation properties and high in reliability in the case of being used for a circuit board or the like.SOLUTION: Provided is a silicon nitride substrate comprising silicon nitride crystal particles and a boundary phase, having a thermal conductivity of 50 W/m K or more, and containing as a sintering assistant, one or more kinds selected from rare earth elements, magnesium, titanium and hafnium by 2 to 14 mass% in terms of oxide, respectively, in which, regarding the cross-sectional structure of the silicon nitride substrate, a ratio of the total length T2 of the boundary phase 3 in the thickness direction to the thickness T1 of the silicon nitride substrate, (T2/T1) is 0.01 to 0.30, the variation from the average value of insulation proof stress when electrodes are contacted with the surface and back surface and measurement is performed by a four terminal method is 15% or lower, and further, the average value of the insulation proof stress is 15 kv/mm or higher.SELECTED DRAWING: Figure 2
【課題】回路基板などの使用した場合、絶縁性が優れ信頼度の高い窒化珪素基板の提供。【解決手段】窒化珪素結晶粒子と粒界相を具備する熱伝導率が５０Ｗ／ｍ・Ｋ以上の窒化珪素基板において、焼結助剤として希土類元素、マグネシウム、チタン、ハフニウムから選択される１種以上を、それぞれ酸化物換算で合計２〜１４質量％含有し、この窒化珪素基板の断面組織は、窒化珪素基板の厚さＴ１に対し厚さ方向の粒界相３の合計長さＴ２の比（Ｔ２／Ｔ１）が０．０１〜０．３０であり、基板の表裏に電極を接触して４端子法で測定したときの絶縁耐力の平均値からのばらつきが１５％以下であり、また、絶縁耐力の平均値が１５ｋｖ／ｍｍ以上である窒化珪素基板。【選択図】図２
SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE CIRCUIT BOARD USING THE SAME
PROBLEM TO BE SOLVED: To provide a silicon nitride substrate excellent in insulation properties and high in reliability in the case of being used for a circuit board or the like.SOLUTION: Provided is a silicon nitride substrate comprising silicon nitride crystal particles and a boundary phase, having a thermal conductivity of 50 W/m K or more, and containing as a sintering assistant, one or more kinds selected from rare earth elements, magnesium, titanium and hafnium by 2 to 14 mass% in terms of oxide, respectively, in which, regarding the cross-sectional structure of the silicon nitride substrate, a ratio of the total length T2 of the boundary phase 3 in the thickness direction to the thickness T1 of the silicon nitride substrate, (T2/T1) is 0.01 to 0.30, the variation from the average value of insulation proof stress when electrodes are contacted with the surface and back surface and measurement is performed by a four terminal method is 15% or lower, and further, the average value of the insulation proof stress is 15 kv/mm or higher.SELECTED DRAWING: Figure 2
【課題】回路基板などの使用した場合、絶縁性が優れ信頼度の高い窒化珪素基板の提供。【解決手段】窒化珪素結晶粒子と粒界相を具備する熱伝導率が５０Ｗ／ｍ・Ｋ以上の窒化珪素基板において、焼結助剤として希土類元素、マグネシウム、チタン、ハフニウムから選択される１種以上を、それぞれ酸化物換算で合計２〜１４質量％含有し、この窒化珪素基板の断面組織は、窒化珪素基板の厚さＴ１に対し厚さ方向の粒界相３の合計長さＴ２の比（Ｔ２／Ｔ１）が０．０１〜０．３０であり、基板の表裏に電極を接触して４端子法で測定したときの絶縁耐力の平均値からのばらつきが１５％以下であり、また、絶縁耐力の平均値が１５ｋｖ／ｍｍ以上である窒化珪素基板。【選択図】図２
SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE CIRCUIT BOARD USING THE SAME
窒化珪素基板およびそれを用いた窒化珪素回路基板
NAKAYAMA NORIO (author) / AOKI KATSUYUKI (author) / SANO TAKASHI (author)
2017-10-05
Patent
Electronic Resource
Japanese
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