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METALLIZED SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
PROBLEM TO BE SOLVED: To provide a metallized substrate which has a high productivity, and in which a high-performance conductor pattern is formed on an insulating substrate.SOLUTION: A metallized substrate is prepared by combining an insulating substrate, a bonding layer that is laminated at least in a partial region of a surface of the insulating substrate and that includes an active metal layer, and a surface conductor layer that is laminated on the bonding layer, and that includes a conductor and has a porous structure. The active metal layer may include at least one kind of active metal selected from a group consisting of Ti, Zr, Hf, Nb, Ta, Cr, Mn and Al, or an alloy containing the active metal. The bonding layer may further include a non-transparent layer. The non-transparent layer may include at least one kind of barrier metal selected from a group consisting of Mo, W, Ni, Pd and Pt, or an alloy including the barrier metal.SELECTED DRAWING: None
【課題】高い生産性で、絶縁性基板に高性能の導体パターンが形成されたメタライズ基板を提供する。【解決手段】絶縁性基板と、この絶縁性基板の表面の少なくとも一部の領域に積層され、かつ活性金属層を含む接合層と、この接合層に積層され、導体を含み、かつ多孔質構造を有する表面導体層とを組み合わせてメタライズ基板を調製する。前記活性金属層は、Ti、Zr、Hf、Nb、Ta、Cr、Mn及びAlからなる群より選択された少なくとも1種の活性金属又はこの活性金属を含む合金を含んでいてもよい。前記接合層は、さらに非透過層を含んでいてもよい。この非透過層は、Mo、W、Ni、Pd及びPtからなる群より選択された少なくとも1種のバリア性金属又はこのバリア性金属を含む合金を含んでいてもよい。【選択図】なし
METALLIZED SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
PROBLEM TO BE SOLVED: To provide a metallized substrate which has a high productivity, and in which a high-performance conductor pattern is formed on an insulating substrate.SOLUTION: A metallized substrate is prepared by combining an insulating substrate, a bonding layer that is laminated at least in a partial region of a surface of the insulating substrate and that includes an active metal layer, and a surface conductor layer that is laminated on the bonding layer, and that includes a conductor and has a porous structure. The active metal layer may include at least one kind of active metal selected from a group consisting of Ti, Zr, Hf, Nb, Ta, Cr, Mn and Al, or an alloy containing the active metal. The bonding layer may further include a non-transparent layer. The non-transparent layer may include at least one kind of barrier metal selected from a group consisting of Mo, W, Ni, Pd and Pt, or an alloy including the barrier metal.SELECTED DRAWING: None
【課題】高い生産性で、絶縁性基板に高性能の導体パターンが形成されたメタライズ基板を提供する。【解決手段】絶縁性基板と、この絶縁性基板の表面の少なくとも一部の領域に積層され、かつ活性金属層を含む接合層と、この接合層に積層され、導体を含み、かつ多孔質構造を有する表面導体層とを組み合わせてメタライズ基板を調製する。前記活性金属層は、Ti、Zr、Hf、Nb、Ta、Cr、Mn及びAlからなる群より選択された少なくとも1種の活性金属又はこの活性金属を含む合金を含んでいてもよい。前記接合層は、さらに非透過層を含んでいてもよい。この非透過層は、Mo、W、Ni、Pd及びPtからなる群より選択された少なくとも1種のバリア性金属又はこのバリア性金属を含む合金を含んでいてもよい。【選択図】なし
METALLIZED SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
メタライズ基板及びその製造方法
HAYASHI TERUHIRO (author) / MAMEZAKI OSAMU (author)
2017-11-09
Patent
Electronic Resource
Japanese
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