A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
COPPER-CERAMIC BONDED BODY AND INSULATION CIRCUIT BOARD
PROBLEM TO BE SOLVED: To provide a highly reliable copper-ceramic bonded body in which the occurrence of a crack in a nitride compound layer can be suppressed, a copper member and a ceramic member composed of silicon nitride are surely bonded, and an insulation circuit board composed of the copper-ceramic bonded body.SOLUTION: The copper-ceramic bonded body of a copper member composed of copper or a copper alloy and a ceramic member composed of silicon nitride is provided in which a nitride compound layer 31 containing one or more kind of nitride-forming element selected from Ti, Nb, Hf, Zr and an Ag-Cu eutectic layer are formed in an order from a ceramic member in a joint boundary between the copper member and the ceramic member, and in which thickness of the nitride compound layer 31 is 0.15 μm to 1.0 μm, and in which an intermetallic compound phase composed of the nitride-forming element and an intermetallic compound containing Si is present between the copper member and the ceramic member, and Cu and Si34 is present in a grain boundary 31a of the nitride compound layer 31.SELECTED DRAWING: Figure 3
【課題】窒化化合物層におけるクラックの発生を抑制でき、銅部材と窒化ケイ素からなるセラミックス部材とが確実に接合された信頼性の高い銅／セラミックス接合体、及び、この銅／セラミックス接合体からなる絶縁回路基板を提供する。【解決手段】銅又は銅合金からなる銅部材と窒化ケイ素からなるセラミックス部材との銅／セラミックス接合体であって、前記銅部材とセラミックス部材との接合界面には、セラミックス部材側から順に、Ｔｉ，Ｎｂ，Ｈｆ，Ｚｒから選択される一種又は二種以上の窒化物形成元素を含む窒化化合物層３１と、Ａｇ−Ｃｕ共晶層と、が形成されており、窒化化合物層３１の厚さは０．１５μｍ以上１．０μｍ以下であり、前記銅部材と前記セラミックス部材との間には、前記窒化物形成元素とＳｉを含む金属間化合物からなる金属間化合物相が存在しており、窒化化合物層３１の粒界３１ａにはＣｕ及びＳｉ３４が存在している。【選択図】図３
COPPER-CERAMIC BONDED BODY AND INSULATION CIRCUIT BOARD
PROBLEM TO BE SOLVED: To provide a highly reliable copper-ceramic bonded body in which the occurrence of a crack in a nitride compound layer can be suppressed, a copper member and a ceramic member composed of silicon nitride are surely bonded, and an insulation circuit board composed of the copper-ceramic bonded body.SOLUTION: The copper-ceramic bonded body of a copper member composed of copper or a copper alloy and a ceramic member composed of silicon nitride is provided in which a nitride compound layer 31 containing one or more kind of nitride-forming element selected from Ti, Nb, Hf, Zr and an Ag-Cu eutectic layer are formed in an order from a ceramic member in a joint boundary between the copper member and the ceramic member, and in which thickness of the nitride compound layer 31 is 0.15 μm to 1.0 μm, and in which an intermetallic compound phase composed of the nitride-forming element and an intermetallic compound containing Si is present between the copper member and the ceramic member, and Cu and Si34 is present in a grain boundary 31a of the nitride compound layer 31.SELECTED DRAWING: Figure 3
【課題】窒化化合物層におけるクラックの発生を抑制でき、銅部材と窒化ケイ素からなるセラミックス部材とが確実に接合された信頼性の高い銅／セラミックス接合体、及び、この銅／セラミックス接合体からなる絶縁回路基板を提供する。【解決手段】銅又は銅合金からなる銅部材と窒化ケイ素からなるセラミックス部材との銅／セラミックス接合体であって、前記銅部材とセラミックス部材との接合界面には、セラミックス部材側から順に、Ｔｉ，Ｎｂ，Ｈｆ，Ｚｒから選択される一種又は二種以上の窒化物形成元素を含む窒化化合物層３１と、Ａｇ−Ｃｕ共晶層と、が形成されており、窒化化合物層３１の厚さは０．１５μｍ以上１．０μｍ以下であり、前記銅部材と前記セラミックス部材との間には、前記窒化物形成元素とＳｉを含む金属間化合物からなる金属間化合物相が存在しており、窒化化合物層３１の粒界３１ａにはＣｕ及びＳｉ３４が存在している。【選択図】図３
COPPER-CERAMIC BONDED BODY AND INSULATION CIRCUIT BOARD
銅／セラミックス接合体、及び、絶縁回路基板
TERASAKI NOBUYUKI (author)
2018-01-18
Patent
Electronic Resource
Japanese
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