A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
To provide a method for producing a silicon carbide member for a semiconductor-manufacturing apparatus, capable of removing a carbon component that exists in an inner surface of a hollow channel inside the silicon carbide member.SOLUTION: A method for producing a silicon carbide member includes the steps of: preparing a silicon carbide sintered compact having a concave portion or a through-hole for a hollow channel; subjecting at least the silicon carbide sintered compact having the concave portion or the through-hole for the hollow channel to an oxygen-containing atmosphere thermal treatment or a plasma treatment; and joining a plurality of silicon carbide sintered compacts containing the thermally-treated silicon carbide sintered compacts mutually to set the hollow channel inside the silicon carbide member.SELECTED DRAWING: Figure 2
【課題】炭化珪素部材内部の中空流路の内面にある炭素成分を除去できる半導体製造装置のための炭化珪素部材の製造方法を提供する。【解決手段】炭化珪素部材の製造方法は、中空流路用の凹部又は貫通孔を有する炭化珪素焼結体を準備する工程と、少なくとも中空流路用の凹部又は貫通孔を有する炭化珪素焼結体に対して酸素含有雰囲気熱処理又はプラズマ処理を施す工程と、熱処理が施された炭化珪素焼結体を含む複数の炭化珪素焼結体を互いに接合し、炭化珪素部材中の中空流路を画定する工程と、を含む。【選択図】図２
To provide a method for producing a silicon carbide member for a semiconductor-manufacturing apparatus, capable of removing a carbon component that exists in an inner surface of a hollow channel inside the silicon carbide member.SOLUTION: A method for producing a silicon carbide member includes the steps of: preparing a silicon carbide sintered compact having a concave portion or a through-hole for a hollow channel; subjecting at least the silicon carbide sintered compact having the concave portion or the through-hole for the hollow channel to an oxygen-containing atmosphere thermal treatment or a plasma treatment; and joining a plurality of silicon carbide sintered compacts containing the thermally-treated silicon carbide sintered compacts mutually to set the hollow channel inside the silicon carbide member.SELECTED DRAWING: Figure 2
【課題】炭化珪素部材内部の中空流路の内面にある炭素成分を除去できる半導体製造装置のための炭化珪素部材の製造方法を提供する。【解決手段】炭化珪素部材の製造方法は、中空流路用の凹部又は貫通孔を有する炭化珪素焼結体を準備する工程と、少なくとも中空流路用の凹部又は貫通孔を有する炭化珪素焼結体に対して酸素含有雰囲気熱処理又はプラズマ処理を施す工程と、熱処理が施された炭化珪素焼結体を含む複数の炭化珪素焼結体を互いに接合し、炭化珪素部材中の中空流路を画定する工程と、を含む。【選択図】図２
METHOD FOR PRODUCING SILICON CARBIDE MEMBER
炭化珪素部材の製造方法
SATO RYOTA (author)
2019-01-10
Patent
Electronic Resource
Japanese
IPC:
C04B
Kalk
,
LIME
/
G03F
Fotomechanische Herstellung strukturierter oder gemusterter Oberflächen, z.B. zum Drucken, zum Herstellen von Halbleiterbauelementen
,
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
/
H01L
Halbleiterbauelemente
,
SEMICONDUCTOR DEVICES
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