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LOW DIELECTRIC CONSTANT (LOW K) DIELECTRIC COMPOSITION FOR HIGH FREQUENCY APPLICATION
To provide a dielectric material capable of firing at low temperature with low K value and high Q value, and a method for manufacturing a dielectric component using such material.SOLUTION: A dielectric material can be fired at less than 1100°C, and has a K value of less than about eight at 10 to 30 GHz and a Q value higher than 500 at 10 to 30 GHz. The dielectric material includes a solid portion containing silica powder of 10 to 99 mass% and a glass component of 1 to 90 mass%, before firing. The glass component contains 50 to 90 mole% of SiO, 0.1 to 35 mole% of BO, 0.1 to 10 mole% or 0.1 to 25 mole% of AlO, 0.1 to 10 mole% of KO, 0.1 to 10 mole% of NaO, 0.1 to 20 mole% of LiO, and 0.1 to 30 mole% of F. The total amount of LiO+NaO+KO is 0.1 to 30 mole% of the glass component. The silica powder can be amorphous or crystalline.SELECTED DRAWING: None
【課題】低Ｋ値、高Ｑ値で低温焼成可能な誘電体材料及びその材料を用いた誘電体部品を形成する方法の提示。【解決手段】誘電体材料は１１００℃未満で焼成することができ、１０〜３０ＧＨｚにおいて約８未満のＫ値及び１０〜３０ＧＨｚにおいて５００よりも高いＱ値を有する。誘電体材料は、焼成前に、１０〜９９質量％のシリカ粉末及び１〜９０質量％のガラス成分を含む固体部を含む。ガラス成分は、５０〜９０モル％ＳｉＯ２と、０．１〜３５モル％Ｂ２Ｏ３と、０．１〜１０モル％又は０．１〜２５モル％Ａｌ２Ｏ３と、０．１〜１０モル％Ｋ２Ｏと、０．１〜１０モル％Ｎａ２Ｏと、０．１〜２０モル％Ｌｉ２Ｏと、０．１〜３０モル％Ｆと、を含む。Ｌｉ２Ｏ＋Ｎａ２Ｏ＋Ｋ２Ｏの総量がガラス成分の０．１〜３０モル％である。シリカ粉末は、非晶質又は結晶質とすることができる。【選択図】なし
LOW DIELECTRIC CONSTANT (LOW K) DIELECTRIC COMPOSITION FOR HIGH FREQUENCY APPLICATION
To provide a dielectric material capable of firing at low temperature with low K value and high Q value, and a method for manufacturing a dielectric component using such material.SOLUTION: A dielectric material can be fired at less than 1100°C, and has a K value of less than about eight at 10 to 30 GHz and a Q value higher than 500 at 10 to 30 GHz. The dielectric material includes a solid portion containing silica powder of 10 to 99 mass% and a glass component of 1 to 90 mass%, before firing. The glass component contains 50 to 90 mole% of SiO, 0.1 to 35 mole% of BO, 0.1 to 10 mole% or 0.1 to 25 mole% of AlO, 0.1 to 10 mole% of KO, 0.1 to 10 mole% of NaO, 0.1 to 20 mole% of LiO, and 0.1 to 30 mole% of F. The total amount of LiO+NaO+KO is 0.1 to 30 mole% of the glass component. The silica powder can be amorphous or crystalline.SELECTED DRAWING: None
【課題】低Ｋ値、高Ｑ値で低温焼成可能な誘電体材料及びその材料を用いた誘電体部品を形成する方法の提示。【解決手段】誘電体材料は１１００℃未満で焼成することができ、１０〜３０ＧＨｚにおいて約８未満のＫ値及び１０〜３０ＧＨｚにおいて５００よりも高いＱ値を有する。誘電体材料は、焼成前に、１０〜９９質量％のシリカ粉末及び１〜９０質量％のガラス成分を含む固体部を含む。ガラス成分は、５０〜９０モル％ＳｉＯ２と、０．１〜３５モル％Ｂ２Ｏ３と、０．１〜１０モル％又は０．１〜２５モル％Ａｌ２Ｏ３と、０．１〜１０モル％Ｋ２Ｏと、０．１〜１０モル％Ｎａ２Ｏと、０．１〜２０モル％Ｌｉ２Ｏと、０．１〜３０モル％Ｆと、を含む。Ｌｉ２Ｏ＋Ｎａ２Ｏ＋Ｋ２Ｏの総量がガラス成分の０．１〜３０モル％である。シリカ粉末は、非晶質又は結晶質とすることができる。【選択図】なし
LOW DIELECTRIC CONSTANT (LOW K) DIELECTRIC COMPOSITION FOR HIGH FREQUENCY APPLICATION
高周波数用途用の低誘電率（ＬＯＷ Ｋ）誘電体組成物
CODY J GLEASON (author) / JOHN J MALONEY (author) / SRINIVASAN SRIDHARAN (author) / GEORGE E SAKOSKE (author) / PETER MARLEY (author) / MOHAMMED H MEGHERHI (author) / HER YIE-SHEIN (author) / ORVILLE W BROWN (author) / JACKIE D DAVIS (author) / THOMAS JOSEPH COFFEY (author)
2019-07-04
Patent
Electronic Resource
Japanese
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Microwave dielectric ceramic material with high dielectric constant
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