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METHOD FOR PRODUCING ALUMINUM NITRIDE POWDER
To provide an aluminum nitride powder that has favorable sinterability and enables an aluminum nitride sintered product to have superior thermal conductivity and an insulating heat dissipation substrate and a semiconductor production apparatus member to have superior heat dissipation uniformity; and a method for producing the same.SOLUTION: A first heating step where aluminum oxide raw material with a specific surface area of 2 to 12 m/g is allowed to undergo a reduction nitriding reaction under nitrogen atmosphere till a conversion rate of 60% to 100% is reached, and a second heating step where heating is conducted under higher temperature conditions than in the first heating step are performed. The temperature at the first heating step is 1450°C or higher and 1600°C or lower. The temperature at the second heating step is higher than 1600°C and not higher than 1800°C. The second heating step is performed preferably at a temperature 100 to 150°C higher than the temperature of the first heating step.SELECTED DRAWING: None
【課題】 良好な焼結性を有し、かつ窒化アルミニウム焼結体として優れた熱伝導率を実現し、絶縁放熱基板、半導体製造装置部材において、優れた放熱均一性を実現可能な窒化アルミニウム粉末及びその製造方法提供する。【解決手段】 原料酸化アルムニウムとして比表面積が２〜１２ｍ２／ｇのものを用い、窒素雰囲気下で、６０％〜１００％の転化率となるまで還元窒化反応を進行させる第一の加熱工程と、第一の加熱工程よりも高温の条件下で加熱する第二の加熱工程とを行うとともに、前記第一の加熱工程の温度は１４５０℃以上１６００℃以下、前記第二の加熱工程の温度は１６００℃を超え１８００℃以下とする。第二の加熱工程は、好ましくは第一の加熱工程の温度よりも１００〜１５０℃高い温度で行う。【選択図】 なし
METHOD FOR PRODUCING ALUMINUM NITRIDE POWDER
To provide an aluminum nitride powder that has favorable sinterability and enables an aluminum nitride sintered product to have superior thermal conductivity and an insulating heat dissipation substrate and a semiconductor production apparatus member to have superior heat dissipation uniformity; and a method for producing the same.SOLUTION: A first heating step where aluminum oxide raw material with a specific surface area of 2 to 12 m/g is allowed to undergo a reduction nitriding reaction under nitrogen atmosphere till a conversion rate of 60% to 100% is reached, and a second heating step where heating is conducted under higher temperature conditions than in the first heating step are performed. The temperature at the first heating step is 1450°C or higher and 1600°C or lower. The temperature at the second heating step is higher than 1600°C and not higher than 1800°C. The second heating step is performed preferably at a temperature 100 to 150°C higher than the temperature of the first heating step.SELECTED DRAWING: None
【課題】 良好な焼結性を有し、かつ窒化アルミニウム焼結体として優れた熱伝導率を実現し、絶縁放熱基板、半導体製造装置部材において、優れた放熱均一性を実現可能な窒化アルミニウム粉末及びその製造方法提供する。【解決手段】 原料酸化アルムニウムとして比表面積が２〜１２ｍ２／ｇのものを用い、窒素雰囲気下で、６０％〜１００％の転化率となるまで還元窒化反応を進行させる第一の加熱工程と、第一の加熱工程よりも高温の条件下で加熱する第二の加熱工程とを行うとともに、前記第一の加熱工程の温度は１４５０℃以上１６００℃以下、前記第二の加熱工程の温度は１６００℃を超え１８００℃以下とする。第二の加熱工程は、好ましくは第一の加熱工程の温度よりも１００〜１５０℃高い温度で行う。【選択図】 なし
METHOD FOR PRODUCING ALUMINUM NITRIDE POWDER
窒化アルミニウム粉末の製造方法
HITOMI TATSUYA (author) / SHIMODA ATSUSHI (author) / NAITO MAYU (author)
2019-09-05
Patent
Electronic Resource
Japanese
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