A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
POLYCRYSTALLINE ALUMINA SUBSTRATE AND LAMINATE
To provide a polycrystalline alumina substrate that can be suitably used as a growth substrate for forming a semiconductor film.SOLUTION: The present invention relates to a polycrystalline alumina substrate that includes aluminum oxide (AlO) as a main component and satisfies following formulas (1) and (2). The formula (1) is 0.001<0.130 and the formula (2) is 0.05<0.60 (where, Iindicates the diffraction peak intensity of (006) surface of aluminum oxide measured by X-ray diffraction, Iindicates the diffraction peak intensity of (1010) surface of aluminum oxide measured by X-ray diffraction, and ΣIindicates total sum of diffraction peak intensity of whole crystal surface of aluminum oxide measured by an X-ray diffraction method).SELECTED DRAWING: None
【課題】半導体膜を形成するための成長基板として好適に使用できる多結晶アルミナ基板を提供する。【解決手段】酸化アルミニウム（Ａｌ２Ｏ３）を主成分とし、下記式（１）及び（２）を満たす多結晶アルミナ基板。０．００１＜Ｉ００６／ΣＩｈｋｌ＜０．１３０ （１）０．０５＜Ｉ１０１０／ΣＩｈｋｌ＜０．６０ （２）（式中、Ｉ００６は、Ｘ線回折により測定した酸化アルミニウムの（００６）面の回折ピーク強度を示し、Ｉ１０１０は、Ｘ線回折により測定した酸化アルミニウムの（１０１０）面の回折ピーク強度を示し、ΣＩｈｋｌはＸ線回折法により測定した酸化アルミニウムの全ての結晶面の回折ピーク強度の総和を示す。）【選択図】なし
POLYCRYSTALLINE ALUMINA SUBSTRATE AND LAMINATE
To provide a polycrystalline alumina substrate that can be suitably used as a growth substrate for forming a semiconductor film.SOLUTION: The present invention relates to a polycrystalline alumina substrate that includes aluminum oxide (AlO) as a main component and satisfies following formulas (1) and (2). The formula (1) is 0.001<0.130 and the formula (2) is 0.05<0.60 (where, Iindicates the diffraction peak intensity of (006) surface of aluminum oxide measured by X-ray diffraction, Iindicates the diffraction peak intensity of (1010) surface of aluminum oxide measured by X-ray diffraction, and ΣIindicates total sum of diffraction peak intensity of whole crystal surface of aluminum oxide measured by an X-ray diffraction method).SELECTED DRAWING: None
【課題】半導体膜を形成するための成長基板として好適に使用できる多結晶アルミナ基板を提供する。【解決手段】酸化アルミニウム（Ａｌ２Ｏ３）を主成分とし、下記式（１）及び（２）を満たす多結晶アルミナ基板。０．００１＜Ｉ００６／ΣＩｈｋｌ＜０．１３０ （１）０．０５＜Ｉ１０１０／ΣＩｈｋｌ＜０．６０ （２）（式中、Ｉ００６は、Ｘ線回折により測定した酸化アルミニウムの（００６）面の回折ピーク強度を示し、Ｉ１０１０は、Ｘ線回折により測定した酸化アルミニウムの（１０１０）面の回折ピーク強度を示し、ΣＩｈｋｌはＸ線回折法により測定した酸化アルミニウムの全ての結晶面の回折ピーク強度の総和を示す。）【選択図】なし
POLYCRYSTALLINE ALUMINA SUBSTRATE AND LAMINATE
多結晶アルミナ基板及び積層体
TOMAI SHIGEKAZU (author) / KAMIOKA YOSHIHIRO (author) / KATSUMATA SATOSHI (author) / YANO KIMINORI (author) / AMANO HIROSHI (author) / DEKI MANATO (author) / HONDA YOSHIO (author)
2020-02-20
Patent
Electronic Resource
Japanese
IPC:
C04B
Kalk
,
LIME
/
C01F
COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
,
Verbindungen der Metalle Beryllium, Magnesium, Aluminium, Calcium, Strontium, Barium, Radium, Thorium oder der Seltenen Erden
/
C23C
Beschichten metallischer Werkstoffe
,
COATING METALLIC MATERIAL
/
C30B
SINGLE-CRYSTAL GROWTH
,
Züchten von Einkristallen
/
H01L
Halbleiterbauelemente
,
SEMICONDUCTOR DEVICES
Process Zone of Polycrystalline Alumina
| British Library Online Contents | 1999
Yttrium in Polycrystalline alpha-Alumina
| British Library Online Contents | 2000