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To provide a method for producing oxide applicable to a semiconductor such as a transistor.SOLUTION: After sputter gas is supplied to a film deposition chamber, plasma 240 having ions of sputter gas is produced near a target 230, and the target is impacted by ions 201 of accelerated sputter gas, so that planar particulates 203 and atoms constituting the target are exfoliated from the target. Surfaces of plural planar particulates are charged with negative in the plasma. One of the charged planar particulates is accumulated while its surface is directed on a substrate 200, and the other one of the planar particulates is accumulated in a region away from one of the planar particulates on the substrate while repulsing to one of the planar particulates on the substrate. Atoms and an aggregate of atoms enter into a gap between one of the planar particulates and the other of the planar particulates, and grow in the gap of the planar particulates in a horizontal direction, so as to fill a gap between one of the planar particulates and the other of the planar particulates.SELECTED DRAWING: Figure 1
【課題】トランジスタの半導体などに適用可能な酸化物を作製する方法の提供。【解決手段】成膜室にスパッタガスを供給した後、ターゲット２３０の近傍にスパッタガスのイオンを有するプラズマ２４０を生成し、加速されたスパッタガスのイオン２０１がターゲットを衝撃することで、ターゲットから平板状の粒子２０３及びターゲットを構成する原子を剥離させ、複数の平板状の粒子はプラズマ中で表面が負に帯電し、帯電した平板状の粒子の一つは、基板２００上に表面を向けて堆積し、平板状の粒子の別の一つは、基板上で平板状の粒子の一つと互いに反発し合いながら、基板上の平板状の粒子の一つと離れた領域に堆積し、平板状の粒子の一つと、平板状の粒子の別の一つとの隙間に、原子、及び原子の集合体が入り込み、原子、及び原子の集合体が、平板状の粒子の隙間を横方向に成長することで、平板状の粒子の一つと、平板状の粒子の別の一つとの隙間を埋める。【選択図】図１
To provide a method for producing oxide applicable to a semiconductor such as a transistor.SOLUTION: After sputter gas is supplied to a film deposition chamber, plasma 240 having ions of sputter gas is produced near a target 230, and the target is impacted by ions 201 of accelerated sputter gas, so that planar particulates 203 and atoms constituting the target are exfoliated from the target. Surfaces of plural planar particulates are charged with negative in the plasma. One of the charged planar particulates is accumulated while its surface is directed on a substrate 200, and the other one of the planar particulates is accumulated in a region away from one of the planar particulates on the substrate while repulsing to one of the planar particulates on the substrate. Atoms and an aggregate of atoms enter into a gap between one of the planar particulates and the other of the planar particulates, and grow in the gap of the planar particulates in a horizontal direction, so as to fill a gap between one of the planar particulates and the other of the planar particulates.SELECTED DRAWING: Figure 1
【課題】トランジスタの半導体などに適用可能な酸化物を作製する方法の提供。【解決手段】成膜室にスパッタガスを供給した後、ターゲット２３０の近傍にスパッタガスのイオンを有するプラズマ２４０を生成し、加速されたスパッタガスのイオン２０１がターゲットを衝撃することで、ターゲットから平板状の粒子２０３及びターゲットを構成する原子を剥離させ、複数の平板状の粒子はプラズマ中で表面が負に帯電し、帯電した平板状の粒子の一つは、基板２００上に表面を向けて堆積し、平板状の粒子の別の一つは、基板上で平板状の粒子の一つと互いに反発し合いながら、基板上の平板状の粒子の一つと離れた領域に堆積し、平板状の粒子の一つと、平板状の粒子の別の一つとの隙間に、原子、及び原子の集合体が入り込み、原子、及び原子の集合体が、平板状の粒子の隙間を横方向に成長することで、平板状の粒子の一つと、平板状の粒子の別の一つとの隙間を埋める。【選択図】図１
OXIDE, AND OXIDE PRODUCING METHOD
酸化物、及び酸化物の作製方法
YAMAZAKI SHUNPEI (author)
2020-05-28
Patent
Electronic Resource
Japanese
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