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SINTERED SILICON NITRIDE BODY, SILICON NITRIDE SUBSTRATE, SILICON NITRIDE CIRCUIT BOARD USING THE SAME, AND SEMICONDUCTOR DEVICE
To provide a sintered silicon nitride body capable of increasing the strength of bonding with metal parts.SOLUTION: A sintered silicon nitride body having an oxide layer 3 at least partly on its surface 2, which is characterized in that, when subjected to the XRD analysis, the surface 2 of the sintered silicon nitride body having thereon an oxide layer 3 gives the strongest peak at a diffraction angle of 21.7 ± 0.3° (which is defined as peak I21.7) and peaks based on silicon nitride crystal particles (the strongest peak based on silicon nitride crystal particles is defined as peak ISiN), and wherein the ratio of I21.7/ISiN is 0.02 to 0.40. The oxide layer 3 preferably contains cristobalite.SELECTED DRAWING: Figure 1
【課題】金属部との接合強度を高めることができる窒化珪素焼結体を提供する。【解決手段】少なくとも一部の表面２に酸化物層３を有する窒化珪素焼結体において、酸化物層３を有する焼結体表面２をＸＲＤ分析したとき、回折角２１．７±０．３°に検出される最強ピークをＩ２１．７、窒化珪素結晶粒子に基づく最強ピークをＩＳｉＮとし、その比であるＩ２１．７／ＩＳｉＮが０．０２以上０．４０以下であることを特徴とする。また、酸化物層３はクリストバライトを含有することが好ましい。【選択図】図１
SINTERED SILICON NITRIDE BODY, SILICON NITRIDE SUBSTRATE, SILICON NITRIDE CIRCUIT BOARD USING THE SAME, AND SEMICONDUCTOR DEVICE
To provide a sintered silicon nitride body capable of increasing the strength of bonding with metal parts.SOLUTION: A sintered silicon nitride body having an oxide layer 3 at least partly on its surface 2, which is characterized in that, when subjected to the XRD analysis, the surface 2 of the sintered silicon nitride body having thereon an oxide layer 3 gives the strongest peak at a diffraction angle of 21.7 ± 0.3° (which is defined as peak I21.7) and peaks based on silicon nitride crystal particles (the strongest peak based on silicon nitride crystal particles is defined as peak ISiN), and wherein the ratio of I21.7/ISiN is 0.02 to 0.40. The oxide layer 3 preferably contains cristobalite.SELECTED DRAWING: Figure 1
【課題】金属部との接合強度を高めることができる窒化珪素焼結体を提供する。【解決手段】少なくとも一部の表面２に酸化物層３を有する窒化珪素焼結体において、酸化物層３を有する焼結体表面２をＸＲＤ分析したとき、回折角２１．７±０．３°に検出される最強ピークをＩ２１．７、窒化珪素結晶粒子に基づく最強ピークをＩＳｉＮとし、その比であるＩ２１．７／ＩＳｉＮが０．０２以上０．４０以下であることを特徴とする。また、酸化物層３はクリストバライトを含有することが好ましい。【選択図】図１
SINTERED SILICON NITRIDE BODY, SILICON NITRIDE SUBSTRATE, SILICON NITRIDE CIRCUIT BOARD USING THE SAME, AND SEMICONDUCTOR DEVICE
窒化珪素焼結体、窒化珪素基板およびそれを用いた窒化珪素回路基板並びに半導体装置
AOKI KATSUYUKI (author) / SANO SHOYA (author) / TAKANO HIROAKI (author) / FUKAZAWA TAKAYUKI (author)
2021-06-17
Patent
Electronic Resource
Japanese
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